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FHFJ202

Description
Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size85KB,1 Pages
ManufacturerFenghua (HK) Electronics Ltd.
Download Datasheet Parametric View All

FHFJ202 Overview

Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN

FHFJ202 Parametric

Parameter NameAttribute value
MakerFenghua (HK) Electronics Ltd.
Parts packaging codeSOT-23
package instructionSOT-23, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum drain current (ID)0.001 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
結型場效應管
N-channel Junction FET
N-channel Junction FET
结型场效应管
DESCRIPTION & FEATURES
概述及特點
Excellent voltage characteristics.
卓越電壓特性
Excellent transient characteristics.
卓越瞬間特性
Especially suited for use in electret condenser microphone.
尤其適用於電介電容麥克風
SOT-23
FHFJ202
PIN ASSIGNMENT
引腳說明
PIN NAME
FUNCTION
PIN NUMBER
引腳序號
管腳符號
功½
SOT-23
D
1
Drain
S
2
Source
G
3
Gate
MAXIMUM RATINGS(T
a
=25℃)
最大額定值
CHARACTERISTIC
特性參數
Symbol
符號
Rating
額定值
Drain-Gate Voltage
漏極-柵極電壓
40
V
DG
Gate-Source Voltage
柵極-源極電壓
V
GS
-40
Drain Current
漏極電流
1
I
D
Forward Gate Current
正向柵極電流
50
I
GF
THERMAL CHARACTERISTICS
熱特性
CHARACTERISTIC
特性參數
Symbol
符號
Max
最大值
Total Device Dissipation FR-5 Board(1) T
A
=25℃
PD
225
Total Device Dissipation Alumina Substrate,(2) T
A
=25℃
P
D
300
½耗散功率 氧化鋁襯底
150,
T
J
,
Junction and Storage Temperature結溫和儲存溫度
T
stg
-55 to +150
1. FR-5=1.0×0.75×0.062in, printed-circuit board.
2. Alumina=0.4×0.3×0.024in, 99.5%alumina
DEVICE MARKING
打標
FHFJ201=62Q
ELECTRICAL CHARACTERISTICS
電特性
(T
A
=25℃ unless otherwise noted
如無特殊說明,溫度為
25℃)
Symbol
Test Condition
Characteristic
特性參數
符號
測試條件
Gate-Source Breakdown Voltage
V
V
DS
=0V, I
G
=-1.0µA
漏極-源極擊穿電壓
(BR)GSS
Unit
單½
Vdc
Vdc
mAdc
mAdc
Unit
單½
mW
mW
Min
最小值
-40
-0.8
0.9
1000
Type
典型值
Max
最大值
-100
-4.0
4.5
Unit
單½
V
pA
V
mA
μS
Gate Revese Current
柵極反向電流
Gate-Source Cutoff Voltage
柵源夾
斷電壓
Zero-Gate Voltage Drain Current
零柵極電壓漏極電流
Forward Transfer Admittance
導納
I
GSS
V
GS(off)
I
DSS
y
fs
V
GS
=-20V, V
DS
=0V
V
DS
= 20V ,I
D
=10nA
V
DS
=20V, V
GS
=0V
V
DS
20V ,f=1.0KHz
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