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P6SMA12CA

Description
TVS Diode, 600W, 11.4V, 12.6V, 10.2V, 5uA, 35.9A, 16.7V
CategoryDiscrete semiconductor    Transient suppression diode   
File Size2MB,3 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric View All

P6SMA12CA Overview

TVS Diode, 600W, 11.4V, 12.6V, 10.2V, 5uA, 35.9A, 16.7V

P6SMA12CA Parametric

Parameter NameAttribute value
Case StyleSMA
Ppk(W)600
MIN_(V)11.4
MAX_(V)12.6
Vwm_(V)10.2
Ir_(uA)5
Ippm_(A)35.9
Vc_(V)16.7
classDiodes
P6SMA Series
FEATURES
• For surface mounted applications in order to
optimize board space.
• Low profile package
• Glass passivated junction
• Low inductance
• Plastic package has Underwriters Laboratory
Flammability
MECHANICAL DATA
• Case: SMA
• Terminals: Solderable per MIL-STD-750, Method 202
• A pprox. Weight: 0.055g / 0.002oz
SMA/ DO-214AC
Maximum Ratings and Electrical characteristics
Ratings at 25
°C
ambient temperature unless otherwise specified.
Parameter
Peak Pulse Power Dissipation on 10/1000 s waveform
(Note1,Note2,
Fig.1).
Peak Forward Surge Current,8.3ms Single Half Sine-Wave
Superimposed on Rated Load, (JEDEC Method) (Note 3,Fig4).
Peak Pulse Current on 10/1000 us waveform (Note 1, Fig 3)
Typical Junction capacitance at VR=4V, f=1MHz
Contact
Air
Symbol
P
PPM
I
FSM
(UNI)
Value
600
Unit
W
100
see Table 1
390
30
30
100
-55 ~ +150
A
A
pF
I
PPM
C
J
V
ESD1
V
ESD2
R
θJA
T
j
, T
stg
ESD Voltage per IEC6100-4-2
kV
°C/W
Typical Thermal Resistance Junction to Ambient(Note 2)
Operating Junction Temperature and Storage Temperature Range
°C
NOTES:
1. Non-repetitive current pulse, per Fig.3 and derated above T
A
=
25
°C
per Fig. 2.
2
2. Mounted on 5 mm (0.13mm thick) land areas.
3. Measured on 8.3ms,single half sine-wave or equivalent square wave,duty cycle=4 pulses per minute maximum.
4. Peak pulse power waveform is 10/1000μS.
ht
t
p
:
//
Revision:20170701-P1
www.lgesem i
.c
o
m
mail:lge@lgesemi.com
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