JMnic
Product Specification
Silicon PNP Power Transistors
2SA1643
DESCRIPTION
・With
TO-220F package
・Complement
to type 2SC4327
・Low
collector saturation voltage
APPLICATIONS
・For
power switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-50
-35
-7
-7
25
150
-55~150
UNIT
V
V
V
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA1643
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-25mA ; I
B
=0
-80
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=-1mA ; I
C
=0
-7
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-5A ;I
B
=-0.3A
-0.5
V
I
CBO
Collector cut-off current
V
CB
=-50V; I
E
=0
-10
μA
I
EBO
Emitter cut-off current
V
EB
=-7V; I
C
=0
-10
μA
h
FE
DC current gain
I
C
=-5A ; V
CE
=-2V
50
f
T
Transition frequency
I
E
=1A ; V
CE
=-12V
75
MHz
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1643
Fig.2 Outline dimensions
3
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