3LP01S-TL-E datasheet, PDF - EEWORLD Datasheet

3LP01S-TL-E: DescriptionSMALL SIGNAL, FET; CategoryDiscrete semiconductor The transistor; File Size518KB，7 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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SMALL SIGNAL, FET

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	0.1 A
Maximum drain-source on-resistance	10.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	3LP01S-TL-E	3LP01S_12	EN6681B
Description	SMALL SIGNAL, FET	SMALL SIGNAL, FET	SMALL SIGNAL, FET
state	-	ACTIVE	ACTIVE
Transistor type	-	GENERAL PURPOSE SMALL SIGNAL	GENERAL PURPOSE SMALL SIGNAL

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