Rectifier Diode, 1 Phase, 1 Element, 40A, 1200V V(RRM), Silicon,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | International Rectifier （ Infineon ） |
| package instruction | R-PUFM-X2 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Other features | UL RECOGNIZED |
| application | POWER |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.31 V |
| JESD-30 code | R-PUFM-X2 |
| JESD-609 code | e0 |
| Maximum non-repetitive peak forward current | 575 A |
| Number of components | 1 |
| Phase | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 150 °C |
| Maximum output current | 40 A |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 1200 V |
| Maximum reverse current | 50 µA |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | UNSPECIFIED |
| Terminal location | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| B40HF120 | RCWP-0502914GS84 | B40HH100 | B40HH120 | |
|---|---|---|---|---|
| Description | Rectifier Diode, 1 Phase, 1 Element, 40A, 1200V V(RRM), Silicon, | Fixed Resistor, Metal Glaze/thick Film, 0.05W, 910000ohm, 40V, 2% +/-Tol, -300,300ppm/Cel, 0602, | Rectifier Diode, 1 Phase, 2 Element, 40A, 1000V V(RRM), Silicon, POWER MODULE-4 | Rectifier Diode, 1 Phase, 2 Element, 40A, 1200V V(RRM), Silicon, POWER MODULE-4 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Other features | UL RECOGNIZED | ANTI-SULFUR | UL RECOGNIZED | UL RECOGNIZED |
| JESD-609 code | e0 | e0 | e0 | e0 |
| Number of terminals | 2 | 2 | 4 | 4 |
| Maximum operating temperature | 150 °C | 155 °C | 150 °C | 150 °C |
| Package shape | RECTANGULAR | RECTANGULAR PACKAGE | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | SMT | FLANGE MOUNT | FLANGE MOUNT |
| Terminal surface | TIN LEAD | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | TIN LEAD | TIN LEAD |
| Maker | International Rectifier （ Infineon ） | - | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） |
| package instruction | R-PUFM-X2 | - | R-PUFM-X4 | R-PUFM-X4 |
| application | POWER | - | POWER | POWER |
| Shell connection | ISOLATED | - | ISOLATED | ISOLATED |
| Configuration | SINGLE | - | SEPARATE, 2 ELEMENTS | SEPARATE, 2 ELEMENTS |
| Diode component materials | SILICON | - | SILICON | SILICON |
| Diode type | RECTIFIER DIODE | - | RECTIFIER DIODE | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.31 V | - | 1.31 V | 1.31 V |
| JESD-30 code | R-PUFM-X2 | - | R-PUFM-X4 | R-PUFM-X4 |
| Maximum non-repetitive peak forward current | 575 A | - | 685 A | 685 A |
| Number of components | 1 | - | 2 | 2 |
| Phase | 1 | - | 1 | 1 |
| Maximum output current | 40 A | - | 40 A | 40 A |
| Package body material | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
| Certification status | Not Qualified | - | Not Qualified | Not Qualified |
| Maximum repetitive peak reverse voltage | 1200 V | - | 1000 V | 1200 V |
| Maximum reverse current | 50 µA | - | 50 µA | 50 µA |
| surface mount | NO | - | NO | NO |
| Terminal form | UNSPECIFIED | - | UNSPECIFIED | UNSPECIFIED |
| Terminal location | UPPER | - | UPPER | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
| Minimum operating temperature | - | -55 °C | -40 °C | -40 °C |
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