WD1033
WD1033
1.5MHz, 2A, Step-down DC-DC Converter
Http//:www.sh-willsemi.com
Descriptions
The WD1033 is a high efficiency, synchronous step
down DC-DC converter optimized for battery powered
portable applications. It supports up to 2A output
current. With a wide input voltage range of 2.5V to 5.5V,
the device supports applications powered by single
Li-ion battery with extended voltage range, two and
three alkaline cell, 3.3V and 5V input voltage range.
The WD1033 operates at 1.5MHz fixed switching
frequency with Pulse-Width-Modulation (PWM) and
enters
Pulse-Skipping-Modulation (PSM) operation
EN
FB
SOT-23-5L
1
5
at light load current to maintain high efficiency over the
entire load current range.
The switching frequency is internally set at 1.5MHz,
allowing the use of tiny surface mount inductor and
input/output capacitors. Low output voltage is easily
supported with the 0.6V feedback reference voltage.
The WD1033 is available in SOT-23-5L package.
Standard product is Pb-free and Halogen-free.
3
5
WD1033
GND
Pin configuration (Top view)
4
2
SW
VIN
4
Features
⚫
⚫
⚫
⚫
⚫
⚫
⚫
Input voltage range
Continue output current
Switching frequency
Efficiency
: 2.5~5.5V
: 2A
: 1.5MHz (Typ.)
: Up to 94%
1
1033
EAYW
2
3
1033
EA
Y
W
= Device code
= Special code
= Year code
= Week code
Marking
Feedback reference voltage : 0.6V
100% duty cycle for low dropout operation
Adjustable Output Voltage
Applications
⚫
⚫
⚫
⚫
Cellphones
PADs
STBs
DSCs
Device
WD1033E-5/TR
Order information
Package
SOT-23-5L
Shipping
3000/Reel&Tape
Will Semiconductor Ltd.
1
Jan.2018- Rev. 1.0.1
WD1033
Typical Applications
Vin:2.5-5.5V
Cin
10uF
L1:2.2uH
VIN
SW
R1
C1
120K
Option
R2
60K
Cout
22uF
WD1033
EN
FB
GND
Fig1 Schematic Diagram
Suggested Component Values
V
OUT
(V)
3.3
1.8
1.5
1.2
1.05
1
0.6
R1(kΩ)
90
100
100
100
100
100
0
R2(kΩ)
20
50
66.6
100
133
148
-
C
IN
(μF)
10
10
10
10
10
10
10
C
OUT
(μF)
22
22
22
22
22
22
22
C1(pF)
22
22
22
22
22
22
22
L(μH)
2.2
2.2
2.2
1.0
1.0
1.0
1.0
Pin Descriptions
Pin Name
EN
GND
SW
VIN
FB
Pin Number
1
2
3
4
5
Ground pin.
Inductor pin.
Pin Description
Enable Control. Pull high to turn on. Do not leave it floating
Input pin. Decouple this pin to GND with at least 10 uF ceramic Cap.
Feedback pin. Connected to the feedback resistor for adjustable
version or VOUT for fix output version
Will Semiconductor Ltd.
2
Jan.2018- Rev. 1.0.1
WD1033
Block Diagram
VIN
U.V.L.O
Currrent
Limit & Feedback
PWM Comp.
Logic
U.V.L.O Comp.
Ramp Wave
Generator
Buffer
Driver
SW
GND
PWM\PSM
Selector
Error Amp.
Verf 0.6V
With
Soft Start
Phase Compesation
OTP
FB
Vref 0.6V
EN
Control
Logic
Absolute Maximum Ratings
Parameter
VIN pin voltage range
EN, FB pin voltage range
SW pin voltage range (DC)
Power Dissipation – SOT-23-5L (Note 1)
Junction to Ambient Thermal Resistance – SOT-23-5L (Note 1)
Symbol
V
IN
-
-
P
D
R
θJA
T
J
T
L
Topr
Tstg
Value
-0.3½6.5
-0.3½V
IN
-0.3½V
IN
0.5
250
150
260
-40 ~ 85
-55 ~ 150
Unit
V
V
V
W
o
C/W
o
C
o
C
o
C
o
C
Junction temperature
Lead temperature(Soldering, 10s)
Operating ambient temperature
Storage temperature
These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum Ratings”
may cause substantial damage to the device. Functional operation of this device at other conditions beyond
those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device
reliability.
Note 1:
Surface mounted on FR-4 Board using 1 square inch pad size, dual side, 1oz copper
Will Semiconductor Ltd.
3
Jan.2018- Rev. 1.0.1
WD1033
Electronics Characteristics
(Ta=25
o
C, V
IN
=3.6V, V
EN
=V
IN
, unless otherwise noted)
Parameter
Input Voltage Range
V
IN
Under Voltage Lockout
Threshold
Standby Supply Current
Shutdown Supply Current
Feedback reference Voltage
Line Regulation
Inductor Limit Current
Oscillator Frequency
R
DS(ON)
of P-Channel FET
R
DS(ON)
of N-Channel FET
Feedback Leakage Current
EN Rising Threshold
EN falling Threshold
EN Leakage Current
Min On Time
Max Duty Cycle
Soft Start Time
Input OVP Shutdown
Over
Volatage
Protection
T
OTP
V
OVP
Rising
Falling
Symbol
V
IN
V
UVLO
I
Q
I
SHDN
V
FB
△
LINE
I
LIM
f
OSC
R
PFET
R
NFET
I
FB
V
ENH
V
ENL
I
EN
V
IN
= 5.5V, V
EN
= 0V or VIN
75
100
700
6.5
6.3
20
155
30
1.4
0.4
1
Rising
Falling
V
FB
= 105%, I
OUT
= 0A
V
EN
= 0V
Vin=Vout(nom)+1 V
0mA≤IOUT≤250MA
V
IN
= 2.5V to 5.5V
V
IN
= 3.6V, V
OUT
= 90%*V
OUT
V
FB
or V
OUT
in regulation
I
SW
= 100mA
I
SW
= −100mA
0.588
Conditions
Min.
2.5
2.4
2.3
40
0.2
0.600
0.15
3.5
1.5
0.12
0.08
±30
1
0.612
Typ.
Max.
5.5
2.5
Units
V
V
uA
uA
V
%/V
A
MHz
Ω
Ω
nA
V
V
uA
nS
%
uS
V
V
uS
o
C
o
C
Blanking Time
Over Temperature Protection
OTP Hysteresis
Will Semiconductor Ltd.
4
Jan.2018- Rev. 1.0.1
WD1033
Typical Characteristics
(Ta=25
o
C, V
IN
=3.6V, unless otherwise noted)
100
90
100
90
Efficiency(%)
Efficiency(%)
80
70
V
OUT
=1.8V,L=2.2uH
80
70
V
OUT
=0.6V,L=2.2uH
60
50
V
IN
=2.7V
V
IN
=3.6V
V
IN
=5.5V
60
50
V
IN
=2.7V
V
IN
=3.6V
V
IN
=5.5V
0
500
1000
1500
2000
0
500
1000
1500
2000
Output Current(mA)
Output Current(mA)
Efficiency vs. Output current
Efficiency vs. Output current
1.84
1.82
0.63
0.62
Output Voltage(V)
Output Voltage(V)
0.61
0.60
0.59
0.58
0.57
V
OUT
=0.6V,L=2.2uH
V
IN
=2.7V
V
IN
=3.6V
V
IN
=5.5V
1.80
1.78
V
OUT
=1.8V,L=2.2uH
1.76
1.74
V
IN
=2.7V
V
IN
=3.6V
V
IN
=5.5V
0
500
1000
1500
2000
0
500
1000
1500
2000
Output Current(mA)
Output Current(mA)
Output voltage vs. Load current
Output voltage vs. Load current
1.832
1.824
0.64
0.63
Output Voltage(V)
Output Voltage(V)
1.816
1.808
1.800
1.792
1.784
1.776
-40
-20
0
20
40
o
0.62
0.61
0.60
0.59
0.58
V
OUT
=0.6V,L=2.2uH
V
IN
=3.6V
I
OUT
=1mA
I
OUT
=100mA
V
OUT
=1.8V,L=2.2uH
V
IN
=3.6V
I
OUT
=1mA
I
OUT
=100mA
60
80
100
0.57
-40
-20
0
20
40
o
60
80
100
Temperature( C)
Temperature( C)
Output voltage vs. Temperature
Will Semiconductor Ltd.
5
Output voltage vs. Temperature
Jan.2018- Rev. 1.0.1
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