FS30ASH-2 datasheet, PDF - EEWORLD Datasheet

FS30ASH-2: DescriptionPower Field-Effect Transistor, 30A I(D), 100V, 0.093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP-3, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size54KB，1 Pages; ManufacturerPOWEREX; Websitehttp://www.pwrx.com/Home.aspx

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Power Field-Effect Transistor, 30A I(D), 100V, 0.093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP-3, 3 PIN

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	POWEREX
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	30 A
Maximum drain current (ID)	30 A
Maximum drain-source on-resistance	0.093 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	35 W
Maximum power dissipation(Abs)	35 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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