IDT71T6280HS133BG datasheet, PDF

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IDT71T6280HS133BG: DescriptionQDR SRAM, 512KX18, 3ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165; Categorystorage storage; File Size212KB，17 Pages; ManufacturerIDT (Integrated Device Technology); Environmental Compliance

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IDT71T6280HS133BG Overview

QDR SRAM, 512KX18, 3ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165

IDT71T6280HS133BG Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	IDT (Integrated Device Technology)
Parts packaging code	BGA
package instruction	TBGA,
Contacts	165
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Maximum access time	3 ns
JESD-30 code	R-PBGA-B165
JESD-609 code	e3
length	15 mm
memory density	9437184 bit
Memory IC Type	QDR SRAM
memory width	18
Number of functions	1
Number of terminals	165
word count	524288 words
character code	512000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512KX18
Package body material	PLASTIC/EPOXY
encapsulated code	TBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	2.6 V
Minimum supply voltage (Vsup)	2.4 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Matte Tin (Sn)
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	30
width	13 mm

IDT71T6280HS133BG Related Products

	IDT71T6280HS133BG	IDT71T6280HS100BG	IDT71T6280HS166BG
Description	QDR SRAM, 512KX18, 3ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165	QDR SRAM, 512KX18, 3ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165	QDR SRAM, 512KX18, 2.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
Is it lead-free?	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to
Maker	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
Parts packaging code	BGA	BGA	BGA
package instruction	TBGA,	TBGA,	TBGA,
Contacts	165	165	165
Reach Compliance Code	compliant	compliant	compliant
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	3 ns	3 ns	2.5 ns
JESD-30 code	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165
JESD-609 code	e3	e3	e3
length	15 mm	15 mm	15 mm
memory density	9437184 bit	9437184 bit	9437184 bit
Memory IC Type	QDR SRAM	QDR SRAM	QDR SRAM
memory width	18	18	18
Number of functions	1	1	1
Number of terminals	165	165	165
word count	524288 words	524288 words	524288 words
character code	512000	512000	512000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C
organize	512KX18	512KX18	512KX18
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TBGA	TBGA	TBGA
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	260	260	260
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.2 mm	1.2 mm
Maximum supply voltage (Vsup)	2.6 V	2.6 V	2.6 V
Minimum supply voltage (Vsup)	2.4 V	2.4 V	2.4 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V
surface mount	YES	YES	YES
technology	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	BALL	BALL	BALL
Terminal pitch	1 mm	1 mm	1 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	30	30	30
width	13 mm	13 mm	13 mm

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