FDD6637_F085
P-Channel PowerTrench
December 2010
FDD6637_F085
-35V, -21A, 18mΩ
Features
®
P-Channel PowerTrench MOSFET
Applications
Inverter
Power Supplies
Typ r
DS(on)
= 9.7mΩ at V
GS
= -10V, I
D
=- 14A
Typ r
DS(on)
= 14.4mΩ at V
GS
= -4.5V, I
D
=- 11A
Typ Q
g(10)
= 45nC at V
GS
= -10V
High performance trench technology for extremely low
r
DS(on).
Qualified to AEC Q101
RoHS Compliant
®
MOSFET
©2010 Fairchild Semiconductor Corporation
FDD6637_F085 Rev. C
1
www.fairchildsemi.com
FDD6637_F085
P-Channel PowerTrench
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
I
D
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (T
C
<
Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Dreate above 25 C
Operating and Storage Temperature
o
Parameter
Ratings
-35
-45
±25
-21
See Figure 4
(Note 1)
61
68
0.46
-55 to + 175
Units
V
V
V
A
mJ
W
W/
o
C
o
V
DS(Avalanche)
Drain to Source Avalanche Voltage (maximum)
155
o
C,
V
GS
= 10V)
C
Thermal Characteristics
R
θJC
R
θJA
Maximum Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
2.2
40
o
o
C/W
C/W
Package Marking and Ordering Information
Device Marking
FDD6637
Device
FDD6637_F085
Package
TO-252
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
®
MOSFET
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250μA, V
GS
= 0V
V
DS
= -28V, V
GS
= 0V
V
GS
= ±25V
-35
-
-
-
-
-
-
-1
±100
V
μA
nA
On Characteristics
V
GS(th)
r
DS(on)
g
FS
Gate to Source Threshold Voltage
Drain to Source On Resistance
Forward Transconductance
V
GS
= V
DS
, I
D
= -250μA
I
D
= -14A, V
GS
= -10V
I
D
= -11A, V
GS
= -4.5V
I
D
= -14A, V
GS
= -10V, T
C
=
V
DS
= -5V, I
D
= -14A
150
o
C
-1
-
-
-
-
-1.6
9.7
14.4
15.3
35
-3
11.6
18
18
-
S
mΩ
V
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Q
g(TOT)
Q
g(5)
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at -10V
Total Gate Charge at -5V
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
V
DS
= -20V, V
GS
= 0V,
f = 1MHz
f = 1MHz
V
GS
= 0 to -10V
V
GS
= 0 to -5V
V
DD
= -20V
I
D
= -14A
-
-
-
-
-
-
-
-
2370
470
250
3.6
45
25
7
10
-
-
-
-
63
35
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
FDD6637_F085 Rev. C
2
www.fairchildsemi.com
FDD6637_F085
P-Channel PowerTrench
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
DD
= -20V, I
D
= -1A,
V
GS
= -10V,
R
GEN
= 6Ω
-
-
-
-
18
10
62
36
32
20
100
58
ns
ns
ns
ns
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: Starting T
J
= 25
o
C, L = 1mH, I
AS
= -11A, V
GS
=10V, V
DD
=-35V during the inductor charging time and 0V during the time in avalanche
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= -14A
I
F
= -14A, dI
SD
/dt = 100A/μs
-
-
-
-0.8
28
15
-1.2
37
20
V
ns
nC
®
MOSFET
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDD6637_F085 Rev. C
3
www.fairchildsemi.com
FDD6637_F085
P-Channel PowerTrench
Typical Characteristics
POWER DISSIPATION MULTIPLIER
1.2
1.0
0.8
0.6
0.4
0.2
0.0
70
-I
D
, DRAIN CURRENT (A)
60
50
40
30
20
10
0
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE
(
o
C
)
175
R
θ
JC
= 2.2 C/W
o
CURRENT LIMITED
BY PACKAGE
V
GS
= -10V
V
GS
= -4.5V
25
50
75
100
125
o
150
175
T
C
, CASE TEMPERATURE
(
C
)
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
®
NORMALIZED THERMAL
IMPEDANCE, Z
θ
JC
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
MOSFET
P
DM
0.1
SINGLE PULSE
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
C
0.01
-5
10
10
-4
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
10
10
10
t, RECTANGULAR PULSE DURATION(s)
-3
-2
-1
10
0
10
1
V
GS
= 10V
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
2
175 - T
C
150
-I
DM
,
PEAK CURRENT (A)
100
SINGLE PULSE
10
-5
10
10
-4
10
10
10
t, RECTANGULAR PULSE DURATION(s)
-3
-2
-1
10
0
10
1
Figure 4. Peak Current Capability
FDD6637_F085 Rev. C
4
www.fairchildsemi.com
FDD6637_F085
P-Channel PowerTrench
Typical Characteristics
300
-I
D
, DRAIN CURRENT (A)
60
-I
AS
, AVALANCHE CURRENT (A)
100
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
100us
10
1ms
10
STARTING T
J
= 25
o
C
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
TC
= 25oC
10ms
DC
STARTING T
J
= 150
o
C
0.1
0.3
1
10
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
90
1
0.001
0.01
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
100
-I
D
, DRAIN CURRENT (A)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
100
80
60
40
20
0
®
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= -5V
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
-I
D
, DRAIN CURRENT (A)
80
60
40
20
0
V
GS
= -10V
V
GS
= -6V
V
GS
= -5V
V
GS
= -4.5V
V
GS
= -4V
V
GS
= -3.5V
V
GS
= -3V
MOSFET
0
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
6
0
1
2
3
4
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
5
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
I
D
=
-14A
r
DS(on)
, DRAIN TO SOURCE
ON-RESISTANCE
(
m
Ω
)
60
50
40
30
20
10
0
2
4
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
70
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-80
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
J
= 175
o
C
T
J
= 25
o
C
I
D
= -14A
V
GS
= -10V
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE
(
V
)
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE
(
o
C
)
200
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDD6637_F085 Rev. C
5
www.fairchildsemi.com
京公网安备 11010802033920号
EEWORLD
