RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, D1, 5 PIN
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | TT Electronics plc |
package instruction | FLANGE MOUNT, R-XDFM-F4 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Shell connection | SOURCE |
Configuration | COMMON SOURCE, 2 ELEMENTS |
Minimum drain-source breakdown voltage | 70 V |
Maximum drain current (ID) | 25 A |
FET technology | METAL-OXIDE SEMICONDUCTOR |
highest frequency band | ULTRA HIGH FREQUENCY BAND |
JESD-30 code | R-XDFM-F4 |
Number of components | 2 |
Number of terminals | 4 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 200 °C |
Package body material | UNSPECIFIED |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | FLAT |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |
DMD1020-A | |
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Description | RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, D1, 5 PIN |
Is it Rohs certified? | incompatible |
Maker | TT Electronics plc |
package instruction | FLANGE MOUNT, R-XDFM-F4 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Shell connection | SOURCE |
Configuration | COMMON SOURCE, 2 ELEMENTS |
Minimum drain-source breakdown voltage | 70 V |
Maximum drain current (ID) | 25 A |
FET technology | METAL-OXIDE SEMICONDUCTOR |
highest frequency band | ULTRA HIGH FREQUENCY BAND |
JESD-30 code | R-XDFM-F4 |
Number of components | 2 |
Number of terminals | 4 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 200 °C |
Package body material | UNSPECIFIED |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | FLAT |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |