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DMD1020-A

Description
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, D1, 5 PIN
CategoryDiscrete semiconductor    The transistor   
File Size194KB,6 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
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DMD1020-A Overview

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, D1, 5 PIN

DMD1020-A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerTT Electronics plc
package instructionFLANGE MOUNT, R-XDFM-F4
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationCOMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage70 V
Maximum drain current (ID)25 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-XDFM-F4
Number of components2
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON

DMD1020-A Related Products

DMD1020-A
Description RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, D1, 5 PIN
Is it Rohs certified? incompatible
Maker TT Electronics plc
package instruction FLANGE MOUNT, R-XDFM-F4
Reach Compliance Code compliant
ECCN code EAR99
Shell connection SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage 70 V
Maximum drain current (ID) 25 A
FET technology METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND
JESD-30 code R-XDFM-F4
Number of components 2
Number of terminals 4
Operating mode ENHANCEMENT MODE
Maximum operating temperature 200 °C
Package body material UNSPECIFIED
Package shape RECTANGULAR
Package form FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type N-CHANNEL
Certification status Not Qualified
surface mount YES
Terminal form FLAT
Terminal location DUAL
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications AMPLIFIER
Transistor component materials SILICON

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