WILLAS
SOT-23 Plastic-Encapsulate Diodes
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design,
SWITCHING DIODE
leakage excellent power dissipation offers
better reverse
current and thermal resistance.
FEATURES
profile surface mounted application in order to
•
Low
optimize board space.
Fast Switching Speed
•
Low power loss, high efficiency.
High current capability, low forward voltage drop.
•
For General Purpose Switching Applications
High
Conductance
•
High
surge capability.
•
Guardring for overvoltage protection.
Pb-Free package is available
•
Ultra high-speed switching.
Silicon epitaxial
for packing code suffix ”G”
•
RoHS product
planar chip, metal silicon junction.
Lead-free parts meet environmental standards
•
Halogen free product for packing code
of
suffix “H”
RoHS product for packing code suffix "G"
•
Moisture Sensitivity Level 1
Halogen free product for packing code suffix "H"
MIL-STD-19500 /228
FM120-M
THRU
MMBD4148
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOT-23
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
1
3
2
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
MARKING: KA2
:Plated terminals, solderable per MIL-STD-750 ,
•
Terminals
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Dimensions in inches and (millimeters)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
Parameter
Symbol
Limit
Unit
•
Weight Approximated
Voltage
Non-Repetitive
:
Peak
Reverse
0.011 gram
V
RM
100
V
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
V
RRM
Peak Repetitive Peak
Reverse Voltage
Working Peak Reverse Voltage
unless otherwise
V
RWM
75
Ratings at 25℃ ambient temperature
specified.
DC Blocking
half wave, 60Hz, resistive of inductive load.
V
R
Single phase
Voltage
V
RMS Reverse Voltage
For capacitive load, derate current by 20%
RATINGS
Forward Continuous Current
Marking Code
Maximum
Rectified Output Current
Average
Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Peak
Forward Surge Current
@t=1.0μs
Maximum DC Blocking Voltage
@
t=1.0s
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
V
R(RMS)
I
FM
53
V
V
RRM
I
O
V
RMS
V
DC
FSM
I
O
Pd
R
I
FSM
θJA
R
ΘJA
T
J
TSTG
12
20
14
20
13
30
21
30
40
150
300
14
2.0
40
1.0
28
15
50
35
50
16
60
42
60
1.0
30
40
120
18
80
56
80
mA
10
100
mA
70
115
150
105
150
120
200
140
200
Vo
Vo
I
A
100
mW
℃/W
Vo
Power Dissipation
Maximum Average Forward Rectified Current
350
357
Am
Peak Forward Surge Current 8.3 ms single
Ambient
Thermal Resistance Junction to
half sine-wave
Junction
Temperature
superimposed on rated load (JEDEC method)
Am
Storage
Temperature
(Note 1)
Typical Junction Capacitance
Typical Thermal Resistance (Note 2)
Operating Temperature Range
T
j
150
-55~+150
℃
T
C
J
STG
℃
℃/
P
-55 to +125
-
65
to +175
-55 to +150
Electrical Ratings @Ta=25℃
Storage Temperature Range
℃
℃
Parameter
CHARACTERISTICS
Symbol
SYMBOL
V
V
F
(BR)
I
V
F1
R
Min
Typ
Max
Unit
Conditions
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
75
0.50
0.70
V
0.85
I
R
=100μA
0.9
0.92
Maximum
breakdown voltage
Reverse
Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Vo
@T A=125℃
0.715
0.855
1.0
1.25
2.5
25
2
4
V
V
V
V
μA
nA
pF
ns
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=75V
V
R
=20V
V
R
=0V,f=1MHz
I
F
=I
R
=10mA
Irr=0.1XI
R
,R
L
=100Ω
10
0.5
mA
Forward voltage
NOTES:
2- Thermal Resistance From Junction to Ambient
V
F2
V
F3
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
V
F4
I
R1
I
R2
C
T
t
rr
Reverse current
Capacitance between terminals
Reverse
recovery time
2012-06
WILLAS ELECTRONIC CORP.
2012-12
WILLAS ELECTRONIC CORP.
WILLAS
SOT-23 Plastic-Encapsulate Diodes
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
High
•
300
surge capability.
•
Guardring for overvoltage protection.
Ultra
•
100
high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
30
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
10
Halogen free product for packing code suffix "H"
T=
a
1
00
℃
FM120-M
THRU
MMBD4148
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
Typical Characteristics
1000
SOD-123H
0.146(3.7)
0.130(3.3)
Reverse
Characteristics
0.012(0.3) Typ.
300
0.071(1.8)
0.056(1.4)
(mA)
(nA)
T
a
=100
℃
100
I
F
FORWARD CURRENT
Mechanical data
REVERSE CURRENT I
R
T=
a
2
5
℃
30
0.040(1.0)
0.024(0.6)
3
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
1
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
0.3
10
0.031(0.8) Typ.
T
a
=25
℃
0.031(0.8) Typ.
Method 2026
3
•
Polarity : Indicated by cathode band
0.1
•
Mounting Position : Any
0.8
0.0
0.4
FORWARD VOLTAGE
•
Weight : Approximated 0.011 gram
V
F
Dimensions in inches and (millimeters)
1.2
1.6
1
0
20
40
60
80
(V)
REVERSE VOLTAGE
V
R
(V)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
Capacitance Characteristics
For capacitive load, derate current by 20%
1.4
RATINGS
400
Power Derating Curve
T
a
=25
℃
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
f=1MHz
Marking Code
CAPACITANCE BETWEEN TERMINALS
C
T
(pF)
(mW)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
14
40
300
15
50
35
50
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Vo
1.3
28
40
Vo
30
P
D
Vo
POWER DISSIPATION
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
1.2
200
Am
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
1.1
100
-55 to +150
℃/
P
-55 to +125
-
65
to +175
0
℃
℃
1.0
0
5
CHARACTERISTICS
10
0
25
50
75
100
125
150
15
20
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
Maximum Forward Voltage at
REVERSE VOLTAGE V
R
(V)
1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
V
F
I
R
0.50
AMBIENT TEMPERATURE
0.70
a
0.85
T
(
℃
)
0.9
0.92
Vo
0.5
10
@T A=125℃
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-12
WILLAS ELECTRONIC CORP.
WILLAS
SOT-23 Plastic-Encapsulate Diodes
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FM120-M
THRU
MMBD4148
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
Outline Drawing
•
Low profile surface mounted application in order to
optimize board space.
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
.063(1.60)
.047(1.20)
.122(3.10)
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
.106(2.70)
Mechanical data
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
,
.006(0.15)MIN.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
SOT-23
0.146(3.7)
0.130(3.3)
SOD-123H
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
.080(2.04)
Maximum RMS Voltage
.070(1.78)
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Maximum Recurrent Peak Reverse Voltage
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
10
115
.008(0.20)
150
100
100
150
.083(2.10)
.110(2.80)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
120
200
140
200
Vo
80
70
.003(0.08)
105
Vo
Vo
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Am
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
℃
P
-
65
to +175
℃
.004(0.10)MAX.
℃
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
V
F
@T A=125℃
0.50
0.70
0.85
0.5
10
0.9
0.92
Vo
NOTES:
2- Thermal Resistance From Junction to Ambient
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
.020(0.50)
.012(0.30)
Dimensions in inches and (millimeters)
2012-06
.055(1.40)
.035(0.89)
I
R
mA
WILLAS ELECTRONIC CORP.
Rev.D
2012-12
WILLAS ELECTRONIC CORP.
Test/Measurement
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