Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・
・With
TO-220 package
・High
power dissipation
APPLICATIONS
・Power
amplifier and medium speed
switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2N5294 2N5296 2N5298
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2N5294
V
CBO
Collector-base voltage
2N5296
2N5298
2N5294
V
CEO
Collector-emitter voltage
2N5296
2N5298
V
EBO
I
C
I
B
P
T
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
80
60
80
70
40
60
7
4
2
36
150
-65~150
V
A
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
3.47
UNIT
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N5294
V
CEO(SUS)
Collector-emitter
sustioning voltage
2N5296
2N5298
2N5294
V
CEsat
Collector-emitter
saturation voltage
2N5296
2N5298
2N5294
V
BE
Base-emitter on voltage
2N5296
2N5298
2N5294/5298
I
CEV
Collector cut-off current
2N5296
I
CER
Collector cut-off current
2N5294/5298
2N5294
I
EBO
Emitter cut-off current
2N5296/5298
2N5294
h
FE
DC current gain
2N5296
2N5298
f
T
Transition frequency
2N5294
t
on
Turn-on time
2N5296
2N5298
2N5294
t
off
Turn-off time
2N5296
2N5298
V
EB
=5V; I
C
=0
I
C
=0.1A ;I
B
=0
2N5294 2N5296 2N5298
CONDITIONS
MIN
70
40
60
TYP.
MAX
UNIT
V
I
C
=0.5A;I
B
=0.05A
I
C
=1.0A;I
B
=0.1A
I
C
=1.5A;I
B
=0.15A
I
C
=0.5A ; V
CE
=4V
I
C
=1.0A ; V
CE
=4V
I
C
=1.5A ; V
CE
=4V
V
CE
=65V;V
BE
=1.5V
T
C
=150℃
V
CE
=35V;V
BE
=1.5V
T
C
=150℃
V
CE
=50V;R
BE
=100Ω
T
C
=150℃
V
EB
=7V; I
C
=0
1.0
mA
1.1
1.3
1.5
0.5
3.0
2.0
5.0
0.5
2.0
V
1.0
V
mA
mA
I
C
=0.5A ; V
CE
=4V
30
I
C
=1.0A ; V
CE
=4V
I
C
=1.5A ; V
CE
=4V
I
C
=0.2A ; V
CE
=4V
I
C
=0.5A;I
B
=0.05A;V
CC
=30V
I
C
=1.0A;I
B
=0.1A;V
CC
=30V
I
C
=1.5A;I
B
=0.15A;V
CC
=30V
I
C
=0.5A;I
B
=0.05A;V
CC
=30V
I
C
=1.0A;I
B
=0.1A;V
CC
=30V
I
C
=1.5A;I
B
=0.15A;V
CC
=30V
15
μs
5.0
μs
20
0.8
80
MHz
120
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N5294 2N5296 2N5298
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
JMnic
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