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MT49H16M36BM-25:B

Description
DDR DRAM, 16MX36, 20ns, CMOS, PBGA144, LEAD FREE, UBGA-144
Categorystorage    storage   
File Size1MB,82 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
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MT49H16M36BM-25:B Overview

DDR DRAM, 16MX36, 20ns, CMOS, PBGA144, LEAD FREE, UBGA-144

MT49H16M36BM-25:B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeBGA
package instructionLEAD FREE, UBGA-144
Contacts144
Reach Compliance Codecompliant
ECCN codeEAR99
access modeMULTI BANK PAGE BURST
Maximum access time20 ns
Other featuresAUTO REFRESH
Maximum clock frequency (fCLK)400 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B144
JESD-609 codee1
length18.5 mm
memory density603979776 bit
Memory IC TypeDDR DRAM
memory width36
Number of functions1
Number of ports1
Number of terminals144
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Encapsulate equivalent codeBGA144,12X18,40/32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
Peak Reflow Temperature (Celsius)260
power supply1.5/1.8,1.8,2.5 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Continuous burst length2,4,8
Maximum standby current0.055 A
Maximum slew rate0.7 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width11 mm
576Mb: x9 x18 x36 CIO RLDRAM 2
Features
CIO RLDRAM 2
MT49H64M9 – 64 Meg x 9 x 8 Banks
MT49H32M18 – 32 Meg x 18 x 8 Banks
MT49H16M36 – 16 Meg x 36 x 8 Banks
Features
• 533 MHz DDR operation (1.067 Gb/s/pin data rate)
• 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock
frequency)
• Organization
– 64 Meg x 9, 32 Meg x 18, and 16 Meg x 36 I/O
– 8 banks
• Reduced cycle time (15ns at 533 MHz)
• Nonmultiplexed addresses (address multiplexing
option available)
• SRAM-type interface
• Programmable READ latency (RL), row cycle time,
and burst sequence length
• Balanced READ and WRITE latencies in order to op-
timize data bus utilization
• Data mask for WRITE commands
• Differential input clocks (CK, CK#)
• Differential input data clocks (DKx, DKx#)
• On-die DLL generates CK edge-aligned data and
output data clock signals
• Data valid signal (QVLD)
• 32ms refresh (16K refresh for each bank; 128K re-
fresh command must be issued in total each 32ms)
• HSTL I/O (1.5V or 1.8V nominal)
–Ω
matched impedance outputs
• 2.5V V
EXT
, 1.8V V
DD
, 1.5V or 1.8V V
DDQ
I/O
• On-die termination (ODT) R
TT
Options
1
• Clock cycle timing
– 1.875ns @
t
RC = 15ns
– 2.5ns @
t
RC = 15ns
– 2.5ns @
t
RC = 20ns
– 3.3ns @
t
RC = 20ns
• Configuration
– 64 Meg x 9
– 32 Meg x 18
– 16 Meg x 36
• Operating temperature
– Commercial (0° to +95°C)
– Industrial (T
C
= –40°C to +95°C;
T
A
= –40°C to +85°C)
• Package
– 144-ball μBGA
– 144-ball μBGA (Pb-free)
– 144-ball FBGA
– 144-ball FBGA (Pb-free)
• Revision
Note:
Marking
-18
-25E
-25
-33
64M9
32M18
16M36
None
IT
FM
BM
TR
SJ
:A/:B
1. Not all options listed can be combined to
define an offered product. Use the part cat-
alog search on
www.micron.com
for availa-
ble offerings.
PDF: 09005aef80fe62fb
576Mb_RLDRAM_2_CIO_D1.pdf - Rev. M 09/15
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2015 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

MT49H16M36BM-25:B Related Products

MT49H16M36BM-25:B MT49H64M9BM-25:B MT49H32M18BM-25E:B MT49H16M36FM-25E:B MT49H16M36FM-18:B MT49H16M36BM-25:A MT49H32M18FM-25:B
Description DDR DRAM, 16MX36, 20ns, CMOS, PBGA144, LEAD FREE, UBGA-144 DDR DRAM, 64MX9, 20ns, CMOS, PBGA144, LEAD FREE, UBGA-144 DDR DRAM, 32MX18, 15ns, CMOS, PBGA144, LEAD FREE, UBGA-144 DDR DRAM, 16MX36, 15ns, CMOS, PBGA144, UBGA-144 DDR DRAM, 16MX36, 15ns, CMOS, PBGA144, UBGA-144 DDR DRAM, 16MX36, 20ns, CMOS, PBGA144, LEAD FREE, UBGA-144 DDR DRAM, 32MX18, 20ns, CMOS, PBGA144, UBGA-144
Is it Rohs certified? conform to conform to conform to incompatible incompatible conform to incompatible
Maker Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
Parts packaging code BGA BGA BGA BGA BGA BGA BGA
package instruction LEAD FREE, UBGA-144 LEAD FREE, UBGA-144 LEAD FREE, UBGA-144 UBGA-144 UBGA-144 LEAD FREE, UBGA-144 UBGA-144
Contacts 144 144 144 144 144 144 144
Reach Compliance Code compliant compliant compliant not_compliant not_compliant unknown not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST
Maximum access time 20 ns 20 ns 15 ns 15 ns 15 ns 20 ns 20 ns
Other features AUTO REFRESH AUTO REFRESH AUTO REFRESH AUTO REFRESH AUTO REFRESH AUTO REFRESH AUTO REFRESH
Maximum clock frequency (fCLK) 400 MHz 400 MHz 400 MHz 400 MHz 533 MHz 400 MHz 400 MHz
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-PBGA-B144 R-PBGA-B144 R-PBGA-B144 R-PBGA-B144 R-PBGA-B144 R-PBGA-B144 R-PBGA-B144
JESD-609 code e1 e1 e1 e0 e0 e1 e0
length 18.5 mm 18.5 mm 18.5 mm 18.5 mm 18.5 mm 18.5 mm 18.5 mm
memory density 603979776 bit 603979776 bit 603979776 bit 603979776 bit 603979776 bit 603979776 bit 603979776 bit
Memory IC Type DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM
memory width 36 9 18 36 36 36 18
Number of functions 1 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1 1
Number of terminals 144 144 144 144 144 144 144
word count 16777216 words 67108864 words 33554432 words 16777216 words 16777216 words 16777216 words 33554432 words
character code 16000000 64000000 32000000 16000000 16000000 16000000 32000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 16MX36 64MX9 32MX18 16MX36 16MX36 16MX36 32MX18
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TBGA TBGA TBGA TBGA TBGA TBGA TBGA
Encapsulate equivalent code BGA144,12X18,40/32 BGA144,12X18,40/32 BGA144,12X18,40/32 BGA144,12X18,40/32 BGA144,12X18,40/32 BGA144,12X18,40/32 BGA144,12X18,40/32
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE
power supply 1.5/1.8,1.8,2.5 V 1.5/1.8,1.8,2.5 V 1.5/1.8,1.8,2.5 V 1.5/1.8,1.8,2.5 V 1.5/1.8,1.8,2.5 V 1.5/1.8,1.8,2.5 V 1.5/1.8,1.8,2.5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
Continuous burst length 2,4,8 2,4,8 2,4,8 2,4,8 2,4,8 2,4,8 2,4,8
Maximum standby current 0.055 A 0.055 A 0.055 A 0.055 A 0.055 A 0.048 A 0.055 A
Maximum slew rate 0.7 mA 0.655 mA 0.655 mA 0.7 mA 0.885 mA 1.1 mA 0.655 mA
Maximum supply voltage (Vsup) 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V
Minimum supply voltage (Vsup) 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
surface mount YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead/Silver (Sn/Pb/Ag) Tin/Lead/Silver (Sn/Pb/Ag) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead/Silver (Sn/Pb/Ag)
Terminal form BALL BALL BALL BALL BALL BALL BALL
Terminal pitch 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
width 11 mm 11 mm 11 mm 11 mm 11 mm 11 mm 11 mm

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