Din-Tek
Silicon P Channel MOS FET
Power Switching
Features
Low on-resistance
R
DS(on)
=
m typ (V
GS
= –4.5 V, I
D
= –1.8 A)
Low drive current
High speed switching
2.5 V gate drive
Preliminary
Datasheet
DINDS0290EJ0400
(Previous:
DIN03G1317-0300)
Rev.4.00
Mar 28, 2011
Outline
Package code: PLSP0003ZB-A
(Package name:
SOT-23)
3
3
1
2
S
2
D
1. Source
2. Gate
3. Drain
G
1
Note:
Marking is “018K”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D(pulse) Note1
I
DR
Pch
(pulse) Note2
Tch
Tstg
I
D
Ratings
–20
+8 / –12
–3.8
–11
–3.8
0.8
150
–55 to +150
Unit
V
V
A
A
A
W
C
C
Notes: 1. PW
10
s,
duty cycle
1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
DINDS0290EJ0400
Rev.4.00
Mar 28, 2011
Page 1 of 6
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body - drain diode forward voltage
Notes: 3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
V
(BR)GSS
I
GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
Min
–20
+8
–12
—
—
—
–0.5
—
—
4.5
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
68
95
6.5
597
149
93
18
43
37
12
6.3
1.1
2.5
–0.85
Max
—
—
—
+10
–10
–1
–1.5
98
115
—
—
—
—
—
—
—
—
—
—
—
–1.1
Unit
V
V
V
A
A
A
V
m
m
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Test conditions
I
D
= –10 mA, V
GS
= 0
I
G
=
+100 A,
V
DS
= 0
I
G
=
–100 A,
V
DS
= 0
V
GS
=
+6
V, V
DS
= 0
V
GS
=
–10
V, V
DS
= 0
V
DS
= –20 V, V
GS
= 0
V
DS
= –10 V, I
D
= –1 mA
I
D
= –1.8 A, V
GS
= –4.5 V
Note3
I
D
= –1.8 A, V
GS
= –2.5 V
Note3
I
D
= –1.8 A, V
DS
= –10 V
Note3
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
I
D
= –1.8 A
V
GS
= –4.5 V
R
L
= 5.5
Rg = 4.7
V
DD
= –10 V
V
GS
= –4.5 V
I
D
= –3.8 A
I
F
= –3.8 A, V
GS
= 0
Note3
DINDS0290EJ0400
Rev.4.00
Mar 28, 2011
Page 2 of 6
DTS2301
Preliminary
Main Characteristics
Maximum Channel Power
Dissipation Curve
1
–100
Maximum Safe Operation Area
Operation in this area
is limited by R
DS(on)
1
m
Channel Dissipation Pch (W)
Drain Current I
D
(A)
0.8
0.6
0.4
0.2
0
100
μs
–10
PW
10
m
s
–1
DC
=
O
10
s
pe
0
ra
m
tio
s
–0.1
Ta = 25°C
1 Shot Pulse
n
0
50
100
150
–0.01
–0.01
–0.1
–1
–10
–100
*When using the glass epoxy board (FR-4: 40
×
40
×
1 mm)
Ambient Temperature Ta (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
–10
–8
–6
–4
–1.8 V
–3 V
–6 V
–10 V
–2.6 V
–2.4 V
Pulse Test
Tc = 25
°
C
Typical Transfer Characteristics
(1)
–10
–8
–6
–4
–2
0
V
DS
= –10 V
Pulse Test
Drain Current I
D
(A)
–2.2 V
–2.0 V
–2
0
–1.6 V
V
GS
= 0 V
Drain Current I
D
(A)
Tc = 75°C
0
–1
0
–2
–4
–6
–8
–10
–25°C
25°C
–2
–3
–4
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Gate to Source Cutoff Voltage vs.
–1
Gate to Source Cutoff Voltage
V
GS(off)
(V)
Typical Transfer Characteristics
(2)
V
DS
= –10 V
Pulse Test
Case Temperature
–1.5
V
DS
= –10 V
Pulse Test
I
D
= –10 mA
–1
–1 mA
–0.5
–0.1 mA
Drain Current I
D
(A)
–0.1
–0.01 Tc = 75°C
25°C
–0.001
–25°C
–0.0001
0
–0.5
–1
–1.5
–2
–2.5
–3
0
–25
0
25
50
75
100 125 150
Gate to Source Voltage V
GS
(V)
Case Temperature Tc (°C)
DINDS0290EJ0400
Rev.4.00
Mar 28, 2011
Page
3
of 6
Preliminary
Drain to Source Saturation Voltage
V
DS(on)
(mV)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
–
400
Pulse Test
Tc = 25°C
1000
Pulse Test
Tc = 25°C
–
300
–
200
I
D
= –3.4 A
–1.8 A
–1 A
–
4
–
6
–
8
–10
100
V
GS
=
–
2.5 V
–4.5 V
–10 V
–
100
–0.5 A
0
0
–
2
10
–0.1
–1
–10
–100
Gate to Source Voltage
V
GS
(V)
Static Drain to Source on State Resistance
vs. Case Temperature
I
D
= –3.4 A
–1.8 A
Drain Current
I
D
(A)
Static Drain to Source on State Resistance
vs. Case Temperature
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
130
110
90
70
50
30
–25
130
110
90
Pulse Test
V
GS
= –4.5 V
–1 A
–0.5 A
–1.8 A
70
50
30
–25
I
D
= –3.4 A
–1 A
–0.5 A
Pulse Test
V
GS
= –
2
.5 V
0
25
50
75
100 125 150
0
25
50
75
100 125 150
Case Temperature
Tc (
°
C)
Forward Transfer Admittance vs.
Drain Current
Case Temperature
Tc (
°
C)
Zero Gate Voltage Drain current vs.
Case Temperature
Pulse Test
V
GS
= 0 V
–1000 V
DS
= –20 V
–100
–10
–1
–0.1
–25
Forward Transfer Admittance
|yfs| (S)
100
Pulse Test
V
DS
=
–
10 V
–25°C
1
25°C
0.1
Tc = 75°C
0.01
–0.01
Zero Gate Voltage Drain current
10
I
DSS
(nA)
–10000
–0.1
–1
–10
0
25
50
75
100 125 150
Drain Current
I
D
(A)
Case Temperature
Tc (
°
C)
DINDS0290EJ0400
Rev.4.00
Mar 28, 2011
Page 4 of 6
Preliminary
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
0
V
DS
V
DD
= –20 V
–5 V
–20
–10 V
V
DD
= –20 V
V
GS
I
D
= –3.4 A
Tc = 25°C
–40
0
2
4
6
8
10
12
–12
–10 V
–5 V
–8
0
1000
Switching Characteristics
V
DD
=
–
10 V
V
GS
=
–
4.5 V
Rg = 4.7
Ω
PW = 5
μs
Tc = 25°C
td(on)
10
tr
Switching Time
t (ns)
–4
100
td(off)
tf
–16
16
–
0.1
1
–
1
–
10
Gate Charge Qg (nc)
Typical Capacitance vs.
Drain to Source Voltage
1000
Ciss
1100
1050
1000
950
900
850
–10
–15
–20
800
Drain Current
I
D
(A)
Input Capacitance vs.
Gate to Source Voltage
Ciss, Coss, Crss (pF)
100
Coss
Crss
Ciss (pF)
V
GS
= 0 V
f = 1 MHz
V
DS
= 0 V
f = 1 MHz
0
2
4
6
8
10
10
–0
–5
–
10
–
8
–
6
–
4
–
2
Drain to Source Voltage
V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
–10
Gate to Source Voltage V
GS
(V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
–0.6
V
GS
= 0
Reverse Drain Current I
DR
(A)
–8
–6
–4
–2
0
–
10V
–
5V
Pulse Test
Tc = 25°C
Body-Drain Diode Forward Voltage V
SDF
(V)
–0.5
I
D
= –10 mA
–0.4
–0.3
–1 mA
–0.2
25
50
75
100
125
150
5, 10 V
V
GS
= 0 V
0
–0.4
–0.8
–1.2
–1.6
–2.0
Source to Drain Voltage V
SD
(V)
Case Temperature Tc (°C)
DINDS0290EJ0400
Rev.4.00
Mar 28, 2011
Page 5 of 6
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