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71V3558S133BQ8

Description
ZBT SRAM, 256KX18, 4.2ns, CMOS, PBGA165
Categorystorage    storage   
File Size642KB,28 Pages
ManufacturerIDT (Integrated Device Technology)
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71V3558S133BQ8 Overview

ZBT SRAM, 256KX18, 4.2ns, CMOS, PBGA165

71V3558S133BQ8 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Reach Compliance Codenot_compliant
Maximum access time4.2 ns
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B165
JESD-609 codee0
memory density4718592 bit
Memory IC TypeZBT SRAM
memory width18
Humidity sensitivity level3
Number of terminals165
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA165,11X15,40
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
power supply3.3 V
Certification statusNot Qualified
Maximum standby current0.04 A
Minimum standby current3.14 V
Maximum slew rate0.3 mA
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn63Pb37)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM

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