MBR1045G datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> diode> MBR1045G

Preview

MBR1045G: DescriptionRectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, TO-220AC,; CategoryDiscrete semiconductor diode; File Size244KB，2 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

Download Datasheet Parametric Compare View All

MBR1045G Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	MBR1045G	-	-	View	Buy Now

MBR1045G Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, TO-220AC,

MBR1045G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Taiwan Semiconductor
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY
Shell connection	CATHODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.7 V
JEDEC-95 code	TO-220AC
JESD-30 code	R-PSFM-T2
JESD-609 code	e3
Maximum non-repetitive peak forward current	150 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	10 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	45 V
Maximum reverse current	100 µA
surface mount	NO
technology	SCHOTTKY
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

Preview

Download Datasheet

View All

CREAT BY ART

MBR1035 - MBR10200

10.0 AMPS. Schottky Barrier Rectifiers

TO-220AC

Pb

RoHS

COMPLIANCE

Features

Plastic material used carriers Underwriters

Laboratory Classification 94V-0

Metal silicon junction, majority carrier conduction

Low power loss, high efficiency

High current capability, low forward voltage drop

High surge capability

For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

Guard-ring for overvoltage protection

High temperature soldering guaranteed:

260℃/10 seconds, 0.25"(6.35mm) from case

Green compound with suffix "G" on packing

code & prefix "G" on datecode

Mechanical Data

Cases: JEDEC TO-220AC molded plastic body

Terminals: Pure tin plated, lead free, solderable

per MIL-STD-750, Method 2026

Polarity: As marked

Mounting position:Any

Mounting torque: 5 in. - lbs, max

Weight: 1.88 grams

Dimensions in inches and (millimeters)

Marking Diagram

MBR10XX

G

Y

WW

= Specific Device Code

= Green Compound

= Year

= Work Week

Maximum Ratings and Electrical Characteristics

Rating at 25

℃

ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Type Number

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

Peak Repetitive Forward Current

(Rated VR, Square Wave, 20KHz)

Peak Forward Surge Current, 8.3 ms Single Half Sine-

wave Superimposed on Rated Load (JEDEC method)

Peak Repetitive Reverse Surge Current (Note 1)

Maximum Instantaneous Forward Voltage at: (Note 2)

I

F

=10A, T

A

=25℃

I

F

=10A, T

A

=125℃

Maximum Instantaneous Reverse Current @ T

A

=25

℃

at Rated DC Blocking Voltage

@ T

A

=125

℃

Voltage Rate of Change (Rated V

R

)

Typical Junction Capacitance

Maximum Typical Thermal Resistance

Operating Junction Temperature Range

Storage Temperature Range

Note 1: 2.0uS Pulse Width, f=1.0KHz

Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle

Symbol

V

RRM

V

RMS

V

DC

I

F(AV)

I

FRM

I

FSM

I

RRM

V

F

MBR

1035

35

24

35

MBR

1045

45

31

45

MBR

1050

50

35

50

MBR

1060

60

42

60

10

20

MBR

1090

90

63

90

MBR MBR MBR

10100 10150 10200

100

150

200

70

100

105

150

140

200

Units

V

A

150

1.0

0.70

0.57

0.80

0.70

0.1

15

10

10,000

500

3

- 65 to + 150

- 65 to + 175

O

0.5

0.85

0.71

6

1.05

-

A

V

mA

V/us

pF

C/W

O

I

R

dV/dt

Cj

R

θJC

T

J

T

STG

C

O

Version:I11

MBR1045G Related Products

	MBR1045G	MBR1060G	MBR1090G	MBR1035G	MBR1050G
Description	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, TO-220AC,	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 60V V(RRM), Silicon, TO-220AC,	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 90V V(RRM), Silicon, TO-220AC,	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 35V V(RRM), Silicon, TO-220AC,	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 50V V(RRM), Silicon, TO-220AC,
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	compliant	compliant	compliant	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	FREE WHEELING DIODE, LOW POWER LOSS	FREE WHEELING DIODE, LOW POWER LOSS	FREE WHEELING DIODE, LOW POWER LOSS	FREE WHEELING DIODE, LOW POWER LOSS	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY
Shell connection	CATHODE	CATHODE	CATHODE	CATHODE	CATHODE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	0.7 V	0.8 V	0.85 V	0.7 V	0.8 V
JEDEC-95 code	TO-220AC	TO-220AC	TO-220AC	TO-220AC	TO-220AC
JESD-30 code	R-PSFM-T2	R-PSFM-T2	R-PSFM-T2	R-PSFM-T2	R-PSFM-T2
JESD-609 code	e3	e3	e3	e3	e3
Maximum non-repetitive peak forward current	150 A	150 A	150 A	150 A	150 A
Number of components	1	1	1	1	1
Phase	1	1	1	1	1
Number of terminals	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	10 A	10 A	10 A	10 A	10 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum repetitive peak reverse voltage	45 V	60 V	90 V	35 V	50 V
Maximum reverse current	100 µA	100 µA	100 µA	100 µA	100 µA
surface mount	NO	NO	NO	NO	NO
technology	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maker	Taiwan Semiconductor	-	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor

Recommended Resources

Light receiving circuit diagram

30W flyback switching power supply circuit diagram

Anti-theft alarm circuit for cultural relics

LED driver circuit

Mileage meter

Wire cutting machine tool control circuit

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components