LDTA114ELT1G datasheet, PDF - EEWORLD Datasheet

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LDTA114ELT1G: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon,; CategoryDiscrete semiconductor The transistor; File Size384KB，3 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn; Environmental Compliance

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LDTA114ELT1G Overview

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon,

LDTA114ELT1G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	LRC
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	0.1 A
Minimum DC current gain (hFE)	30
Number of components	1
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.2 W
surface mount	YES
Transistor component materials	SILICON

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LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistor

PNP Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

•

Applications

Inverter, Interface, Driver

LDTA114ELT1G

Features

1) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

3) Only the on/off conditions need to be set for operation,

making the device design easy.

We declare that the material of product compliance with

RoHS requirements.

SOT–23

•

Absolute maximum ratings

(Ta=25°C)

Parameter

Symbol

Limits

Unit

BASE

COLLECTOR

EMITTER

Supply voltage

Input voltage

Output current

Power dissipation

Junction temperature

Storage temperature

C(Max.)

Tstg

−

−40

+10

−

100

200

150

−55

+150

°C

DEVICE MARKING AND RESISTOR VALUES

Device

LDTA114ELT1G

LDTA114ELT3G

Marking

A6A

R1 (K)

R2 (K)

Shipping

3000/Tape & Reel

10000/Tape & Reel

Electrical characteristics

(Ta=25°C)

Parameter

Input voltage

Output voltage

Input current

Output current

DC current gain

Input resistance

Resistance ratio

Transition frequency

∗

Characteristics of built-in transistor

Symbol Min.

I(off)

I(on)

O(on)

O(off)

∗

−

−3

−

0.8

−

Typ.

−

250

Max.

−0.5

−

−0.3

−0.88

−0.5

−

1.2

−

Unit

µA

−

kΩ

−

MHz

Conditions

=−5V,

=−100µA

=−0.3V,

=−10mA

=−10mA/−0.5mA

=−5V

=−50V,

=0V

=−5V,

=−5mA

−

=−10V,

=5mA,

f=100MHz

1/3

LDTA114ELT1G Related Products

	LDTA114ELT1G	LDTA114ELT3G
Description	Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon,
Is it Rohs certified?	conform to	conform to
Maker	LRC	LRC
Reach Compliance Code	unknown	unknown
Maximum collector current (IC)	0.1 A	0.1 A
Minimum DC current gain (hFE)	30	30
Number of components	1	1
Polarity/channel type	PNP	PNP
Maximum power dissipation(Abs)	0.2 W	0.2 W
surface mount	YES	YES
Transistor component materials	SILICON	SILICON

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