ATC100B820JT500XT datasheet, PDF

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ATC100B820JT500XT: DescriptionUHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA; Categorysemiconductor Discrete semiconductor; File Size1MB，19 Pages; ManufacturerFREESCALE (NXP)

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ATC100B820JT500XT Overview

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA

ATC100B820JT500XT Parametric

Parameter Name	Attribute value
Number of terminals	4
Minimum breakdown voltage	110 V
Processing package description	PLASTIC, ROHS COMPLIANT, WB-4, CASE-1484-04, 4 PIN
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
surface mount	Yes
Terminal form	FLAT
terminal coating	TIN
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE
Shell connection	SOURCE
Number of components	1
Transistor component materials	SILICON
Channel type	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	RF POWER
highest frequency band	ULTRA HIGH FREQUENCY BAND

ATC100B820JT500XT Related Products

	ATC100B820JT500XT	476KXM063M	477KXM063M	ATC100B240JT500XT	C1206C224Z5VAC	CRCW12062700FKTA	T494X226K035AT
Description	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
Number of terminals	4	4	4	4	4	4	4
Minimum breakdown voltage	110 V	110 V	110 V	110 V	110 V	110 V	110 V
Processing package description	PLASTIC, ROHS COMPLIANT, WB-4, CASE-1484-04, 4 PIN	PLASTIC, ROHS COMPLIANT, WB-4, CASE-1484-04, 4 PIN	PLASTIC, ROHS COMPLIANT, WB-4, CASE-1484-04, 4 PIN	PLASTIC, ROHS COMPLIANT, WB-4, CASE-1484-04, 4 PIN	PLASTIC, ROHS COMPLIANT, WB-4, CASE-1484-04, 4 PIN	PLASTIC, ROHS COMPLIANT, WB-4, CASE-1484-04, 4 PIN	PLASTIC, ROHS COMPLIANT, WB-4, CASE-1484-04, 4 PIN
EU RoHS regulations	Yes	Yes	Yes	Yes	Yes	Yes	Yes
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package Size	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
surface mount	Yes	Yes	Yes	Yes	Yes	Yes	Yes
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
terminal coating	TIN	TIN	TIN	TIN	TIN	TIN	TIN
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
structure	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Shell connection	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE
Number of components	1	1	1	1	1	1	1
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT
Transistor type	RF POWER	RF POWER	RF POWER	RF POWER	RF POWER	RF POWER	RF POWER
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND

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