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TZQ5249B

Description
Zener Diode, 19V V(Z), 5%, 0.5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS, QUADROMELF-2
CategoryDiscrete semiconductor    diode   
File Size31KB,3 Pages
ManufacturerLITEON
Websitehttp://optoelectronics.liteon.com/en-global/Home/index
Lite-On began producing LED lamps in 1975; the company has steadily grown to become one of the world's largest manufacturers of optoelectronics products by providing customers with visible and infrared product solutions. High-volume production of commercial and application-specific products, as well as strong R&D and vertical integration capabilities have proven to be key and differentiating factors in Lite-On's success.
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TZQ5249B Overview

Zener Diode, 19V V(Z), 5%, 0.5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS, QUADROMELF-2

TZQ5249B Parametric

Parameter NameAttribute value
MakerLITEON
Parts packaging codeMELF
package instructionO-LELF-R2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage19 V
surface mountYES
technologyZENER
Terminal formWRAP AROUND
Terminal locationEND
Maximum voltage tolerance5%
Working test current6.6 mA

TZQ5249B Preview

Download Datasheet
TZQ5221B - TZQ5267B
500mW SURFACE MOUNT ZENER DIODE
POWER SEMICONDUCTOR
Features
500mW Power Dissipation
High Stability
Low Noise
Outline Similar to JEDEC DO-213AA
Hemetic Package
Mechanical Data
Case: QuadroMELF, Glass
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Cathode Band Only
Weight: 0.034 grams (approx.)
QuadroMELF
Dim
A
B
C
D
Min
3.3
1.4
Max
3.7
1.6
1.7∅ Typical
0.3 Typical
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Characteristic
Power Dissipation
Zener Current
Thermal Resistance, Junction to Ambient Air
Forward Voltage
(Note 1)
(Note 1)
(Note 1)
P
d
I
Z
R
θJA
V
F
@ T
A
= 25°C unless otherwise specified
Value
500
P
d
/V
Z
300
1.5
-65 to +175
Unit
mW
mA
K/W
V
°C
Symbol
@ I
F
= 200mA
Operating and Storage Temperature Range
Notes:
T
j,
T
STG
1. Valid provided that electrodes are kept at ambient temperature.
2. Tested with pulses, T
p
100ms.
DS30014 Rev. C-2
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