AOD486A
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD486A uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge.This device is suitable for use in PWM, load
switching and general purpose applications.
-RoHS Compliant
-Halogen Free*
Features
V
DS
(V) = 40V
I
D
= 50 A (V
GS
= 10V)
R
DS(ON)
< 9.8 mΩ (V
GS
= 10V)
R
DS(ON)
< 13 mΩ (V
GS
= 4.5V)
ESD Protected!
100% UIS Tested!
100% Rg Tested!
D
Top View
D
TO-252
D-PAK
Bottom View
G
S
G
S
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
40
±20
50
36
100
30
135
50
25
2
1.3
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=25°C
Repetitive avalanche energy L=0.3mH
Power Dissipation
Power Dissipation
B
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Case
B
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
17.4
45
1.2
Max
30
60
3
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD486A
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=250μA, V
GS
=0V
V
DS
=40V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=5A
Forward Transconductance
V
DS
=5V, I
D
=20A
I
S
=1A, V
GS
=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
T
J
=125°C
1.75
100
8.1
12.15
10.8
47
0.76
1
50
1600
V
GS
=0V, V
DS
=20V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
320
100
3.4
22
V
GS
=10V, V
DS
=20V, I
D
=20A
10.5
4.2
4.8
6.5
V
GS
=10V, V
DS
=20V, R
L
=1Ω,
R
GEN
=3Ω
I
F
=20A, dI/dt=100A/μs
12.5
33
16
31
33
1920
9.8
16
13
2
Min
40
1
5
±100
3
Typ
Max
Units
V
μA
µA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=100A/μs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25°C. The Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
μs
pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=175°C.
G. The package is limited to a maximum of 25A continuous current.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev2: Sep. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD486A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
80
5V
4V
60
I
D
(A)
I
D
(A)
40
60
80
125°C
100
V
DS
=5V
-40°C
25°C
V
GS
=3.5V
40
20
0
0
1
2
V
GS
=3V
20
125°C
-40°C
25°C
0
3
4
5
2
2.5
3
3.5
4
4.5
5
5.5
V
DS
(Volts)
Fig 1: On-Region Characteristics
V
GS
(Volts)
Figure 2: Transfer Characteristics
1.6
V
GS
=4.5V
Normalized On-Resistance
V
GS
=10V
I
D
=20A
14
500
150
60
12
R
DS(ON)
(m
Ω
)
1.4
10
1.2
V
GS
=4.5V
I
D
=5A
8
V
GS
=10V
1
0.8
6
0
5
10
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
0.6
-50
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
40
35
30
R
DS(ON)
(m
Ω
)
25
20
15
10
5
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
I
S
(A)
I
D
=20A
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
25°C
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
125°C
-40°C
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD486A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
4
8
12
16
20
24
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1000.0
100.0
I
D
(Amps)
10.0
1.0
0.1
0.0
0.01
0.1
1
V
DS
(Volts)
10
100
T
J(Max)
=175°C
T
C
=25°C
R
DS(ON)
limited
100μ
Power (W)
100μs
DC
1ms
V
DS
=20V
I
D
=20A
Capacitance (pF)
2400
2000
1600
1200
800
400
0
0
5
20
25
30
35
V
DS
(Volts)
Figure 8: Capacitance Characteristics
10
15
40
C
oss
C
rss
C
iss
200
160
120
80
40
0
0.0001
0.001
0.01
0.1
500
150
60
T
J(Max)
=175°C
Tc=25°C
1
10
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
T
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD486A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
110
I
D
(A), Peak Avalanche Current
100
Power Dissipation (W)
0.001
90
80
70
60
50
40
30
20
10
0
0.000001
0.00001
0.0001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
T
A
=150°C
T
A
=25°C
55
50
45
40
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 13: Power De-rating (Note B)
60
50
Current rating I
D
(A)
40
30
20
10
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
100
90
80
70
Power (W)
60
50
40
30
20
10
0
0.001
0.01
0.1
1
10
500
150
60
T
A
=25°C
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
Single Pulse
T
on
0.01
0.1
1
10
0.01
0.001
0.00001
0.0001
0.001
T
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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