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AOD2810

Description
80V N-Channel MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size289KB,6 Pages
ManufacturerAlpha & Omega Semiconductor
Websitehttp://www.aosmd.com/about
Download Datasheet Parametric View All

AOD2810 Overview

80V N-Channel MOSFET

AOD2810 Parametric

Parameter NameAttribute value
MakerAlpha & Omega Semiconductor
package instruction,
Reach Compliance Codecompliant
AOD2810
80V N-Channel MOSFET
General Description
The AOD2810 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of R
DS(ON)
, Ciss and Coss. This device is
ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=6V)
80V
46A
< 8.5mΩ
< 12mΩ
100% UIS Tested
100% R
g
Tested
TO252
DPAK
Top View
D
D
Bottom View
D
S
G
S
G
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
80
±20
46
36
160
10.5
8.5
35
61
100
50
2.5
1.6
-55 to 175
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
E
AS
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=100°
C
T
A
=25°
C
C
T
A
=70°
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
16
41
1.15
Max
20
50
1.5
Units
°
C/W
°
C/W
°
C/W
Rev 0: Dec. 2012
www.aosmd.com
Page 1 of 6
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