AON6210
30V N-Channel MOSFET
General Description
The AON6210 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Conduction and
switching losses are minimized due to an extremely low
combination of R
DS(ON)
and Crss.In addition,switching
behavior is well controlled with a "Schottky style" soft
recovery body diode.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
30V
85A
< 1.8mΩ
< 2.5mΩ
100% UIS Tested
100% R
g
Tested
DFN5X6
Top View
Bottom View
1
2
3
4
Top View
8
7
6
5
D
G
S
PIN1
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
B
C
C
Maximum
30
±20
85
67
350
28
22
85
361
83
33
2.3
1.5
-55 to 150
Units
V
V
A
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°C
T
C
=25°C
T
C
=100°C
T
A
=25°C
A
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
14
40
1
Max
17
55
1.5
Units
°C/W
°C/W
°C/W
Rev0 : Jan 2010
www.aosmd.com
Page 1 of 6
AON6210
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=30V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=20A
Forward Transconductance
V
DS
=5V, I
D
=20A
Diode Forward Voltage
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
G
4200
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
1500
95
0.5
60
V
GS
=10V, V
DS
=15V, I
D
=20A
30
8
7
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
GEN
=3Ω
I
F
=20A, dI/dt=500A/µs
2
Min
30
Typ
Max
Units
V
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
1
5
100
1.1
350
1.5
T
J
=125°C
2.1
2
110
0.7
1
85
5250
2240
160
1
80
38
10
13
12
7
53
14
20
70
25
88
30
105
6300
3000
270
1.5
100
45
12
18
1.8
2.5
2.5
1.6
2.1
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
A. The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep initial
T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Jan 2010
www.aosmd.com
Page 2 of 6
AON6210
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140
10V
120
100
I
D
(A)
80
60
40
20
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
4
Normalized On-Resistance
2
1.8
1.6
1.4
1.2
1
0.8
0
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
5
10
0
25
50
75
100
125
150
175
200
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
V
GS
=10V
I
D
=20A
V
GS
=2.5V
6V
4V
3V
I
D
(A)
120
100
80
60
40
20
0
1
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
25°C
125°C
140
V
DS
=5V
3
R
DS(ON)
(m
Ω
)
V
GS
=4.5V
2
1
V
GS
=10V
0
17
5
2
10
V
GS
=4.5V
I
D
=20A
5
I
D
=30A
4
R
DS(ON)
(m
Ω
)
3
125°C
2
1
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
I
S
(A)
1.0E+02
1.0E+01
40
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
125°C
25°C
Rev 0: Jan 2010
www.aosmd.com
Page 3 of 6
AON6210
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=20A
Capacitance (pF)
7000
6000
5000
4000
3000
2000
1000
0
0
40
60
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
20
80
0
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
C
rss
C
oss
C
iss
8
V
GS
(Volts)
6
4
2
0
1000.0
100.0
I
D
(Amps)
10.0
1.0
0.1
0.0
0.01
200
R
DS(ON)
limited
10µs
10µs
Power (W)
160
DC
T
J(Max)
=150°C
T
C
=25°C
100µs
1ms
10ms
T
J(Max)
=150°C
T
C
=25°C
120
80
17
5
2
10
0.1
1
V
DS
(Volts)
10
100
40
0.0001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.001
0.01
0.1
1
10
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=1.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
1
0.1
P
D
T
on
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Jan 2010
www.aosmd.com
Page 4 of 6
AON6210
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
I
AR
(A) Peak Avalanche Current
100
T
A
=25°C
T
A
=100°C
100
T
A
=150°C
80
60
40
20
0
10
100
1000
Time in avalanche, t
A
(µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
100
80
60
40
20
0
0
25
50
75
100
125
150
T
CASE
(°C)
Figure 14: Current De-rating (Note F)
Power (W)
1
0
25
50
75
100
125
150
T
CASE
(°C)
Figure 13: Power De-rating (Note F)
T
A
=125°C
10
Power Dissipation (W)
10000
T
A
=25°C
Current rating I
D
(A)
1000
100
17
5
2
10
10
1
0.00001
0.001
0.1
10
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
0
18
1000
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
40
0.1
P
D
Single Pulse
T
on
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
0.01
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Jan 2010
www.aosmd.com
Page 5 of 6
京公网安备 11010802033920号
EEWORLD
