ET- 740
N-Channel MOSFET
Features
■
■
■
■
■
R
DS(on)
(Max 0.55
Ω
)@V
GS
=10V
Gate Charge (Typical 38nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
Symbol
●
2. Drain
1. Gate
◀
●
●
▲
3. Source
General Description
This Power MOSFET is produced using Integral’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switching DC/DC converters, switch mode power
supply, DC-AC converters for uninterruped power supply, motor
control.
TO-220
1 2
3
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG,
T
J
T
L
Drain to Source Voltage
Continuous Drain Current(@T
C
= 25
°C)
Continuous Drain Current(@T
C
= 100
°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@T
C
= 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 2)
(Note 1)
(Note 3)
(Note 1)
Parameter
Value
400
10
6.3
40
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
±
25
450
13.4
5.5
134
1.08
- 55 ~ 150
300
Thermal Characteristics
Value
Min.
-
-
-
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Typ.
-
0.5
-
Max.
0.93
-
62.5
Units
°C/W
°C/W
°C/W
Ver.00/21.08.2009
IFP740-TSe.doc
Page 1 of 2
BEIJING ESTEK ELECTRONICS CO.,LTD
ET- 740
Electrical Characteristics
Symbol
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 400 V, V
GS
= 0 V
V
DS
= 320 V, T
C
= 125°C
V
GS
= 25 V, V
DS
= 0 V
V
GS
= -25 V, V
DS
= 0 V
400
--
--
--
--
--
--
0.50
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= 10 V, I
D
= 5.0 A
V
DS
= 40 V, I
D
= 5.0 A
(Note 4)
2.0
--
--
--
0.44
9.0
4.0
0.55
--
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
1570
150
15
2040
195
20
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 320 V, I
D
= 10.0A,
V
GS
= 10 V
(Note 4, 5)
V
DD
= 200V, I
D
= 10.0 A,
R
G
= 25
Ω
(Note 4, 5)
--
--
--
--
--
--
--
25
75
115
70
38
8
13
60
160
240
150
50
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
V
GS
= 0 V, I
S
= 10.0 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 10.0 A,
dI
F
/ dt = 100 A/µs
(Note 4)
--
--
--
--
--
--
--
--
225
1.59
10
40
1.5
--
--
A
A
V
ns
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 7.9mH, I
AS
= 10.0A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
10.0A, di/dt
≤
300µA/s, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Ver.00/21.08.2009
IFP740-TSe.doc
Page 2 of 2
BEIJING ESTEK ELECTRONICS CO.,LTD
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