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VYA200XT

Description
Rectifier Diode, 1 Phase, 2 Element, 12.5A, 200V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size112KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

VYA200XT Overview

Rectifier Diode, 1 Phase, 2 Element, 12.5A, 200V V(RRM), Silicon,

VYA200XT Parametric

Parameter NameAttribute value
MakerMicrosemi
Reach Compliance Codeunknown
Other featuresLEAKAGE CURRENT IS NOT AT 25 DEG C
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.8 V
JESD-30 codeR-XUFM-D4
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current12.5 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse current5000 µA
Maximum reverse recovery time0.2 µs
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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