VSIB2540-E3 datasheet, PDF - EEWORLD Datasheet

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VSIB2540-E3: DescriptionBridge Rectifier Diode, 25A, 400V V(RRM),; CategoryDiscrete semiconductor diode; File Size89KB，4 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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VSIB2540-E3 Overview

Bridge Rectifier Diode, 25A, 400V V(RRM),

VSIB2540-E3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Vishay
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-609 code	e3
Maximum non-repetitive peak forward current	350 A
Number of components	4
Maximum operating temperature	150 °C
Maximum output current	25 A
Maximum repetitive peak reverse voltage	400 V
surface mount	NO
Terminal surface	Matte Tin (Sn)

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VSIB2520 thru VSIB2580

New Product

Vishay General Semiconductor

Single-Phase Single In-Line Bridge Rectifiers

FEATURES

• UL Recognition file number E54214

• Thin Single In-Line package

• Glass passivated chip junction

• High surge current capability

• High case dielectric strength of 2500 V

RMS

• Solder Dip 260 °C, 40 seconds

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

General purpose use in ac-to-dc bridge full wave

rectification for Switching Power Supply, Home

Appliances, Office Equipment, Industrial Automation

applications.

MECHANICAL DATA

Case:

GSIB-5S

Epoxy meets UL 94V-0 flammability rating

Terminals:

Matte tin plated (E3 Suffix) leads,

solderable per J-STD-002B and JESD22-B102D

Polarity:

As marked on body

Mounting Torque:

10 cm-kg (8.8 inches-lbs) max.

Recommended Torque:

5.7 cm-kg (5 inches-lbs)

Case Style GSIB-5S

MAJOR RATINGS AND CHARACTERISTICS

F(AV)

RRM

FSM

max.

25 A

200 V to 800 V

350 A

10 µA

1.0 V

150 °C

MAXIMUM RATINGS

= 25 °C unless otherwise noted)

PARAMETER

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified

output current at

= 98 °C

= 25 °C

SYMBOL

RRM

RMS

F(AV)

FSM

, T

STG

VSIB2520

200

140

200

VSIB2540

400

280

400

(1)

3.5

(2)

350

500

- 55 to + 150

VSIB2560

600

420

600

VSIB2580

800

560

800

UNIT

sec

°C

Peak forward surge current single sine-wave

superimposed on rated load

Rating for fusing (t < 8.3 ms)

Operating junction and storage temperature range

Note:

(1) Unit case mounted on Al plate heatsink

(2) Units mounted on P.C.B. without heatsink

Document Number 84655

07-Jun-06

www.vishay.com

VSIB2540-E3 Related Products

	VSIB2540-E3	VSIB2580E3	VSIB2520-E3	VSIB2520E3	VSIB2560E3	VSIB2540E3
Description	Bridge Rectifier Diode, 25A, 400V V(RRM),	3.5A, 800V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASITC, GSIB-5S, 4 PIN	Bridge Rectifier Diode, 25A, 200V V(RRM),	3.5A, 200V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASITC, GSIB-5S, 4 PIN	3.5A, 600V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASITC, GSIB-5S, 4 PIN	3.5A, 400V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASITC, GSIB-5S, 4 PIN
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-609 code	e3	e3	e3	e3	e3	e3
Maximum non-repetitive peak forward current	350 A	350 A	350 A	350 A	350 A	350 A
Number of components	4	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	25 A	3.5 A	25 A	3.5 A	3.5 A	3.5 A
Maximum repetitive peak reverse voltage	400 V	800 V	200 V	200 V	600 V	400 V
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	Matte Tin (Sn)	MATTE TIN	Matte Tin (Sn)	MATTE TIN	MATTE TIN	MATTE TIN
package instruction	-	R-PSFM-T4	-	R-PSFM-T4	R-PSFM-T4	LEAD FREE, PLASITC, GSIB-5S, 4 PIN
Contacts	-	4	-	4	4	4
Other features	-	UL RECOGNIZED	-	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED
Minimum breakdown voltage	-	800 V	-	200 V	600 V	400 V
Diode component materials	-	SILICON	-	SILICON	SILICON	SILICON
JESD-30 code	-	R-PSFM-T4	-	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4
Humidity sensitivity level	-	1	-	1	1	1
Phase	-	1	-	1	1	1
Number of terminals	-	4	-	4	4	4
Minimum operating temperature	-	-55 °C	-	-55 °C	-55 °C	-55 °C
Package body material	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	FLANGE MOUNT	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	-	NOT APPLICABLE	-	NOT APPLICABLE	NOT APPLICABLE	NOT APPLICABLE
Certification status	-	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
Terminal form	-	THROUGH-HOLE	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	-	SINGLE	-	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	-	NOT APPLICABLE	-	NOT APPLICABLE	NOT APPLICABLE	NOT APPLICABLE

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