Silicon Controlled Rectifier, 275A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AB
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | International Rectifier ( Infineon ) |
package instruction | POST/STUD MOUNT, O-MUPM-H3 |
Reach Compliance Code | compliant |
Other features | HIGH SPEED |
Nominal circuit commutation break time | 18 µs |
Configuration | SINGLE |
Maximum DC gate trigger current | 200 mA |
Maximum DC gate trigger voltage | 3 V |
Maximum holding current | 600 mA |
JEDEC-95 code | TO-209AB |
JESD-30 code | O-MUPM-H3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -40 °C |
Package body material | METAL |
Package shape | ROUND |
Package form | POST/STUD MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Certification status | Not Qualified |
Maximum rms on-state current | 275 A |
Maximum repetitive peak off-state leakage current | 40000 µA |
Off-state repetitive peak voltage | 1200 V |
Repeated peak reverse voltage | 1200 V |
surface mount | NO |
Terminal surface | TIN LEAD |
Terminal form | HIGH CURRENT CABLE |
Terminal location | UPPER |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Trigger device type | SCR |