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48V
MoBL
CY62148V MoBL™
512K x 8 MoBL Static RAM
Features
• Low voltage range:
— 2.7V–3.6V
• Ultra low active power
• Low standby power
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
• CMOS for optimum speed/power
The device can be put into standby mode when deselected
(CE HIGH).
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O
pins (I/O
0
through I/O
7
) is then written into the location speci-
fied on the address pins (A
0
through A
18
).
Reading from the device is accomplished by taking Chip En-
able (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
The eight input/output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW and WE LOW).
The CY62148V is available in a 36-ball FBGA, 32 pin TSOPII,
and a 32-pin SOIC package.
Functional Description
The CY62148V is a high-performance CMOS static RAM or-
ganized as 524,288 words by 8 bits. This device features ad-
vanced circuit design to provide ultra-low active current. This
is ideal for providing More Battery Life™ (MoBL™) in portable
applications such as cellular telephones. The device also has
an automatic power-down feature that significantly reduces
power consumption by 99% when addresses are not toggling.
Logic Block Diagram
Data in Drivers
I/O
0
I/O
1
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
ROW DECODER
SENSE AMPS
I/O
2
I/O
3
I/O
4
I/O
5
512K x 8
ARRAY
CE
WE
COLUMN
DECODER
POWER
DOWN
I/O
6
I/O
7
A
10
A
11
A
12
A
13
A
14
A
15
A
16
A
17
A
18
OE
62148V-1
Cypress Semiconductor Corporation
Document #: 38-05070 Rev. **
•
3901 North First Street
•
San Jose
•
CA 95134 • 408-943-2600
Revised September 4, 2001
CY62148V MoBL™
Pin Configurations
TSOPII/SOIC
Top View
A
17
A
16
A
14
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
I/O
1
I/O
2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
FBGA
Top View
1
V
CC
A
15
A
18
WE
A
13
A
8
A
9
A
11
OE
A
10
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
A
0
I/O
4
I/O
5
V
SS
V
CC
I/O
6
I/O
7
A
9
OE
A
10
A
18
CE
A
11
A
17
A
16
A
12
A
15
A
13
2
A
1
A
2
3
NC
WE
NC
4
A
3
A
4
A
5
5
A
6
A
7
6
A
8
I/O
0
I/O
1
V
CC
V
SS
I/O
2
I/O
3
A
14
A
B
C
D
E
F
G
H
62148V–2
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................... 55°C to +125°C
Supply Voltage to Ground Potential ............... –0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State
[1]
....................................–0.5V to V
CC
+ 0.5V
DC Input Voltage
[1]
................................ –0.5V to V
CC
+ 0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Operating Range
Range
Industrial
Ambient Temperature
–40°C to +85°C
V
CC
2.7V to 3.6V
Product Portfolio
Power Dissipation (Industrial)
Product
Min.
CY62148V
2.7V
V
CC
Range
Typ.
[2]
3.0V
Max.
3.6V
Speed
70 ns
Operating (I
CC
)
Typ.
[2]
7
Maximum
15 mA
Ty.p
[2]
2
µA
Standby (I
SB2
)
Maximum
20
µA
Notes:
1. V
IL(min.)
= –2.0V for pulse durations less than 20 ns.
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ.)
, T
A
= 25°C.
Document #: 38-05070 Rev. **
Page 2 of 12
CY62148V MoBL™
Electrical Characteristics
Over the Operating Range
CY62148V
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Output Leakage Current
V
CC
Operating Supply
Current
GND < V
I
< V
CC
GND < V
O
< V
CC
, Output
Disabled
I
OUT
= 0 mA, (f =
f
MAX
= 1/t
RC
) CMOS
Levels
V
CC
= 3.6V
Test Conditions
I
OH
= –1.0 mA
I
OL
= 2.1 mA
Min.
2.4
0.4
2.2
–0.5
–1
–1
+1
+1
7
V
CC
+ 0.5V
0.8
+1
+1
15
Typ.
[2]
Max.
Unit
V
V
V
V
µA
µA
mA
V
CC
= 2.7V
V
CC
= 2.7V
V
CC
= 3.6V
V
CC
= 2.7V
I
OUT
= 0 mA, f = 1 MHz CMOS Levels
I
SB1
Automatic CE
Power-Down Current—
CMOS Inputs
Automatic CE
Power-Down Current—
CMOS Inputs
CE > V
CC
−
0.3V,
V
IN
> V
CC
−
0.3V or
V
IN
< 0.3V, f = f
MAX
CE > V
CC
−
0.3V
V
IN
> V
CC
−
0.3V
or V
IN
< 0.3V, f = 0
L
V
CC
=
3.6V
LL
1
2
100
mA
µA
I
SB2
1
2
50
20
µA
µA
Capacitance
[3]
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= 3.0V
Max.
6
8
Unit
pF
pF
Thermal Resistance
Description
Thermal Resistance
(Junction to Ambient)
[3]
Test Conditions
Still Air, soldered on a 4.25 x 1.125 inch, 4-lay-
er printed circuit board
Symbol
Θ
JA
Θ
JC
Others
TBD
TBD
BGA
TBD
TBD
Units
°C/W
°C/W
Thermal Resistance
[3]
(Junction to Case)
Note:
3. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05070 Rev. **
Page 3 of 12
CY62148V MoBL™
AC Test Loads and Waveforms
R1
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
R2
V
CC
Typ
10%
GND
Rise Time: 1 V/ns
ALL INPUT PULSES
90%
90%
10%
Fall time: 1 V/ns
62148V–3
62148V–4
Equivalent to:
THÉVENIN EQUIVALENT
R
TH
V
TH
OUTPUT
Parameters
R1
R2
R
TH
V
TH
3.0V
1105
1550
645
1.75V
Unit
Ohms
Ohms
Ohms
Volts
Data Retention Characteristics
(Over the Operating Range)
Parameter
V
DR
I
CCDR
Description
V
CC
for Data Retention
Data Retention Current
V
CC
= 1.0V
L/ LL
CE > V
CC
−
0.3V,
V
IN
> V
CC
−
0.3V or
V
IN
< 0.3V
No input may exceed
V
CC
+0.3V
0
t
RC
Conditions
Min.
1.0
0.2
Typ.
[2]
Max.
3.6
5.5
Unit
V
µA
µA
t
CDR[3]
t
R[4]
Chip Deselect to Data
Retention Time
Operation Recovery
Time
ns
ns
Note:
4. Full Device AC operation requires linear V
CC
ramp from V
DR
to V
CC(min.)
> 10
µ
s or stable at V
CC(min.)
>
10
µ
s.
Data Retention Waveform
DATA RETENTION MODE
V
CC
1.0V
t
CDR
CE
62148V–5
V
DR
> 1.0 V
1.0V
t
R
Document #: 38-05070 Rev. **
Page 4 of 12
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