IRGCH50FE datasheet, PDF - EEWORLD Datasheet

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IRGCH50FE: DescriptionInsulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2; CategoryDiscrete semiconductor The transistor; File Size18KB，1 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRGCH50FE Overview

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2

IRGCH50FE Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
Parts packaging code	DIE
package instruction	UNCASED CHIP, R-XUUC-N2
Contacts	2
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	FAST SPEED
Collector-emitter maximum voltage	1200 V
Configuration	SINGLE
Gate emitter threshold voltage maximum	5.5 V
JESD-30 code	R-XUUC-N2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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PD-9.1421

TARGET

IRGCH50FE

IRGCH50FE IGBT Die in Wafer Form

1200 V

Size 5

Fast Speed

5" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

CE (on)

(BR)CES

GE(th)

CES

GES

Description

Collector-to-Emitter Saturation Voltage

Colletor-to-Emitter Breakdown Voltage

Gate Threshold Voltage

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

Guaranteed (Min/Max)

Test Conditions

3.5V Max.

= 20A, T

= 25°C, V

= 15V

1200V Min.

= 25°C, I

CES

= 250µA, V

= 0V

3.0V Min., 5.5V Max.

= V

, T

=25°C, I

=250µA

250 µA Max.

= 25°C, V

= 1200V

500 nA Max.

= 25°C, V

= +/- 20V

Mechanical Data

Norminal Backmetal Composition, Thickness:

Norminal Front Metal Composition, Thickness:

Dimensions:

Wafer Diameter:

Wafer thickness:

Relevant Die Mechanical Dwg. Number

Minimum Street Width

Reject Ink Dot Size

Ink Dot Location

Recommended Storage Environment:

Reference Standard IR packaged part ( for design ) : IRGPH50F

Cr-Ni-Ag ( 1kA-4kA-6kA )

99% Al, 1% Si (3 microns)

0.257" x 0.260"

125mm, with std. < 100 > flat

.015" + / -.003"

01-5104

100 Microns

0.25mm Diameter Minimum

See Die Outline drawing below

Store in original container, in dessicated

nitrogen, with no contamination

Die Outline

INK DOT

LOCATION

3.01

(.119 )

NOTES :

1. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS ( INCHES )

2. CONTRO LLING DIMENSION : ( INCH )

3. LETTER DESIGNATION :

S = SO URCE

G = GATE

4. DIMENSIONAL TOLERANCES

BONDING PADS : < 0.635 TO LERANCE = +/- 0.013

W IDTH

< (.0250 ) TOLERANCE =+/- (.0005 )

> 0.635 TOLERANCE = +/- 0.025

LENGTH

> (.0250 ) TOLERANCE = +/- (.0010 )

OVERALL DIE

< 1.270 TOLERANCE = +/- 0.102

W IDTH

< (.050 ) TOLERANCE = +/- (.004 )

> 0.635 TOLERANCE = +/- 0.203

LENGTH

> (.050 ) TOLERANCE = +/- (.008 )

5. UNLESS OTHERWISE NOTED ALL DIE ARE GEN III

1.78

(.070 )

EMITTER

6.60

(.260 )

0.56

(.022 )

6.53

(.257 )

0.58

(.023 )

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