ST733CLPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 940 A
FEATURES
•
•
•
•
•
•
•
•
•
•
•
940 A
TO-200AC (B-PUK)
Metal case with ceramic insulator
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
International standard case TO-200AC (B-PUK)
High surge current capability
Low thermal impedance
High speed performance
Lead (Pb)-free
Designed and qualified for industrial level
RoHS
COMPLIANT
PRODUCT SUMMARY
I
T(AV)
TYPICAL APPLICATIONS
•
•
•
•
Inverters
Choppers
Induction heating
All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
TEST CONDITIONS
VALUES
940
T
hs
55
1900
I
T(RMS)
T
hs
50 Hz
I
TSM
60 Hz
50 Hz
60 Hz
V
DRM
/V
RRM
t
q
T
J
Range
25
20 000
A
20 950
2000
1820
400 to 800
10 to 20
- 40 to 125
V
µs
°C
kA
2
s
UNITS
A
°C
A
°C
I
2
t
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
ST733C..L
08
800
900
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
400
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
75
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Document Number: 94378
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
ST733CLPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 940 A
CURRENT CARRYING CAPABILITY
I
TM
180° el
180° el
I
TM
100
µs
I
TM
FREQUENCY
UNITS
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
R
Voltage before turn-on V
D
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
2200
2050
1370
500
50
V
DRM
50
40
10/0.47
1900
1660
1070
370
3580
3600
2900
1220
50
V
DRM
-
3100
3130
2450
980
6800
3750
2120
960
50
V
DRM
-
5920
3240
1780
770
V
A/µs
55
10/0.47
°C
Ω/µF
A
55
40
10/0.47
55
40
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state
current at heatsink temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one half cycle,
non-repetitive surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
Typical latching current
I
2
√t
V
TM
V
T(TO)1
V
T(TO)2
r
t1
r
t2
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
940 (350)
55 (85)
1900
20 000
20 950
16 800
Sinusoidal half wave,
initial T
J
= T
J
maximum
17 600
2000
1820
1410
1290
20 000
1.63
1.09
1.20
0.32
0.29
600
1000
mΩ
V
kA
2
√s
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
I
TM
= 1700 A, T
J
= T
J
maximum,
t
p
= 10 ms sine wave pulse
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
T
J
= 25 °C, I
T
> 30 A
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
Ω,
I
G
= 1 A
mA
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94378
Revision: 11-Aug-08
ST733CLPbF Series
Inverter Grade Thyristors
Vishay High Power Products
(Hockey PUK Version), 940 A
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
minimum
Maximum turn-off time
maximum
t
q
SYMBOL
dI/dt
t
d
TEST CONDITIONS
T
J
= T
J
maximum, V
DRM
= Rated V
DRM
, I
TM
= 2 x dI/dt
Gate pulse: 20 V 20
Ω,
10 µs 0.5 µs rise time
T
J
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 50 A DC, t
p
= 1 µs
Resistive load, gate pulse: 10 V, 5
Ω
source
T
J
= T
J
maximum,
I
TM
= 550 A, commutating dI/dt = 40 A/µs
V
R
= 50 V, t
p
= 500 µs, dV/dt: see table in device code
VALUES
1000
1.5
10
20
µs
UNITS
A/µs
BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and off-state leakage current
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum, linear to 80 % V
DRM
,
higher value available on request
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
75
UNITS
V/µs
mA
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
+ V
GM
- V
GM
I
GT
V
GT
I
GD
V
GD
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
Ω
T
J
= T
J
maximum, t
p
≤
5 ms
TEST CONDITIONS
T
J
= T
J
maximum, f = 50 Hz, d% = 50
VALUES
60
10
10
20
5
200
3
20
0.25
UNITS
W
A
V
mA
V
mA
V
T
J
= T
J
maximum, rated V
DRM
applied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
SYMBOL
T
J
T
Stg
R
thJ-hs
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.073
0.031
0.011
0.005
14 700
(1500)
255
See dimensions - link at the end of datasheet
N
(kg)
g
K/W
UNITS
°C
Maximum thermal resistance, case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
R
thC-hs
TO-200AC (B-PUK)
Document Number: 94378
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
ST733CLPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 940 A
ΔR
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.009
0.011
0.014
0.020
0.036
DOUBLE SIDE
0.009
0.011
0.014
0.021
0.036
RECTANGULAR CONDUCTION
SINGLE SIDE
0.006
0.011
0.015
0.021
0.036
DOUBLE SIDE
0.006
0.011
0.015
0.022
0.036
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Maximum Allowable Heatsink T
emperature (°C)
Maximum Allowable Heatsink T
emperature (°C)
130
120
110
100
90
80
70
60
50
40
0
100
200
30°
S 733C..L S
T
eries
(S
ingle S Cooled)
ide
R
thJ-hs
(DC) = 0.073 K/ W
130
120
110
100
90
80
70
60
50
40
30
20
0
200
400
30°
S 733C..L S
T
eries
(Double S Cooled)
ide
R
thJ-hs
(DC) = 0.031 K/ W
Conduction Angle
Conduc tion Angle
60°
90°
120°
180°
60°
90°
120°
180°
300
400
500
600
700
600
800 1000 1200 1400
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Maximum Allowable Heatsink T
emperature (°C)
130
120
110
100
90
80
70
60
50
40
30
20
0
200
S 733C..L S
T
eries
(S
ingle S Cooled)
ide
R
thJ-hs
(DC) = 0.073 K/ W
Maximum Allowable Heatsink T
emperature (°C)
130
120
110
100
90
80
70
60
50
40
30
20
0
500
1000
1500
30°
60°
90°
120°
180°
DC
2000
Conduction Period
S 733C..L S
T
eries
(Double S Cooled)
ide
R
thJ-hs
(DC) = 0.031 K/ W
Conduction Period
30°
60°
90°
120°
180°
DC
800
1000
400
600
Average On-state Current (A)
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94378
Revision: 11-Aug-08
ST733CLPbF Series
Inverter Grade Thyristors
Vishay High Power Products
(Hockey PUK Version), 940 A
Maximum Average On-state Power Loss (W)
2500
180°
120°
90°
60°
30°
ine
Peak Half S Wave On-state Current (A)
20000
18000
16000
14000
12000
10000
2000
RMS Limit
1500
Maximum Non Repetitive S
urge Current
Versus Pulse T
rain Duration. Control
Of Conduc tion May Not Be Ma intained.
Initial T = 125°C
J
No Voltage Reapplied
Rated V
RRM
Reapplied
1000
Conduc tion Angle
500
S
T733C..L S
eries
T = 125°C
J
0
200
400
600
800 1000 1200 1400
S 733C..L S
T
eries
8000
0.01
0.1
Pulse T
rain Duration (s)
1
0
Average On-state Current (A)
Fig. 5 - On-State Power Loss Characteristics
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
Instantaneous On-state Current (A)
Maximum Average On-state Power Loss (W)
2500
180°
120°
90°
60°
30°
2000
RMS Limit
1500
1000
T = 25°C
J
T = 125°C
J
1000
Conduc tion Angle
500
S 733C..L S
T
eries
T = 125°C
J
0
200
400
600
800 1000 1200 1400
S 733C..L S
T
eries
0
Average On-state Current (A)
100
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Instantaneous On-state Voltage (V)
Fig. 6 - On-State Power Loss Characteristics
18000
Fig. 9 - On-State Voltage Drop Characteristics
0.1
S 733C..L S
T
eries
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
16000
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
14000
T
ransient T
hermal Impedanc e Z
thJ-hs
(K/W)
Peak Half S Wave On-state Current (A)
ine
0.01
S
teady S
tate Value
R
thJ-hs
= 0.073 K/ W
(S
ingle S
ide Cooled)
R
thJ-hs
= 0.031 K/ W
(Double S
ide Cooled)
(DC Operation)
12000
10000
S 733C..L S
T
eries
8000
1
10
100
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
0.001
0.001
0.01
0.1
1
10
100
S
quare Wave Pulse Duration (s)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 10 - Thermal Impedance Z
thJC
Characteristics
Document Number: 94378
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
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