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WV3HG128M72EEU534PD4SG

Description
DDR DRAM Module, 128MX72, 0.5ns, CMOS, ROHS COMPLIANT, SODIMM-200
Categorystorage    storage   
File Size151KB,11 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance  
Download Datasheet Parametric View All

WV3HG128M72EEU534PD4SG Overview

DDR DRAM Module, 128MX72, 0.5ns, CMOS, ROHS COMPLIANT, SODIMM-200

WV3HG128M72EEU534PD4SG Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicrosemi
Parts packaging codeSODIMM
package instructionDIMM,
Contacts200
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.5 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XZMA-N200
JESD-609 codee4
memory density9663676416 bit
Memory IC TypeDDR DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals200
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature
organize128MX72
Package body materialUNSPECIFIED
encapsulated codeDIMM
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountNO
technologyCMOS
Temperature levelOTHER
Terminal surfaceGold (Au)
Terminal formNO LEAD
Terminal locationZIG-ZAG
Maximum time at peak reflow temperatureNOT SPECIFIED
White Electronic Designs
WV3HG128M72EEU-PD4
ADVANCED*
1GB – 128Mx72 DDR2 SDRAM UNBUFFERED, SO-DIMM w/PLL
FEATURES
Unbuffered 200-pin (SO-DIMM) small-outline dual
in-line memory module
Support ECC detection and correction
Fast data transfer rates: PC2-6400*, PC2-5300*,
PC2-4200 and PC2-3200
V
CC
= V
CCQ
= 1.8V ±0.1V
V
CCSPD
= 1.7V to 3.6V
JEDEC standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
Differential clock input (CK,CK#)
Four-bit prefetch architecture
Multiple internal device banks for concurrent
operation
Programmable CAS# latency (CL): 3 4, 5*, and 6*
Adjustable data-output drive strength
7.8µs average periodic refresh interval
On-die termination (ODT)
Posted CAS# latency: 0, 1, 2, 3 and 4
Serial Presence Detect (SPD) with EEPROM
Auto & self refresh (64ms: 8,192 cycle refresh)
Gold edge contacts
RoHS compliant
JEDEC approved pin-out
Package option
• 200 Pin SO-DIMM: 30.00mm (1.181") TYP
DESCRIPTION
The WV3HG128M72EEU is a 128Mx72 Double Data Rate
DDR2 SDRAM high density module. This memory module
consists of nine 128Mx8 bit DDR2 Synchronous DRAMs
in FBGA packages, mounted on a 200-pin SO-DIMM FR4
substrate.
* This product is under development, is not qualified or characterized and is subject to
change or cancellation without notice.
NOTE: Consult factory for availability of:
• Vendor source control options
• Industrial temperature option
OPERATING FREQUENCIES
PC2-3200
Clock Speed
CL-t
RCD
-t
RP
* Consult factory for availability
PC2-4200
266MHz
4-4-4
PC2-5300*
333MHz
5-5-5
PC2-6400*
400MHz
6-6-6
200MHz
3-3-3
November 2006
Rev. 3
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
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