2SK3990-01S datasheet, PDF - EEWORLD Datasheet

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2SK3990-01S: DescriptionPower Field-Effect Transistor, 3A I(D), 600V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(S), 3 PIN; CategoryDiscrete semiconductor The transistor; File Size299KB，4 Pages; ManufacturerFuji Electric Co., Ltd.

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2SK3990-01S Overview

Power Field-Effect Transistor, 3A I(D), 600V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(S), 3 PIN

2SK3990-01S Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	unknow
Avalanche Energy Efficiency Rating (Eas)	237.3 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (Abs) (ID)	3 A
Maximum drain current (ID)	3 A
Maximum drain-source on-resistance	3.3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	60 W
Maximum pulsed drain current (IDM)	12 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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2SK3990-01L,S,SJ

Super FAP-G Series

Features

High speed switching

No secondary breadown

Avalanche-proof

Low on-resistance

Low driving power

FUJI POWER MOSFET

200511

N-CHANNEL SILICON POWER MOSFET

Outline Drawings [mm]

Applications

Switching regulators

DC-DC converters

UPS (Uninterruptible Power Supply)

See to P4

Maximum ratings and characteristic

Absolute maximum ratings

(Tc=25°C unless otherwise specified)

Item

Drain-source voltage

Continuous drain current

Pulsed drain current

Gate-source voltage

Repetitive or non-repetitive

Non-repetitive

Maximum avalanche energy

Repetitive

Maximum avalanche energy

Maximum drain-source dV/dt

Peak diode recovery dV/dt

Maximum power dissipation

Operating and storage

temperature range

Symbol

DSX

D(puls]

/dt

dV/dt

stg

Ratings

600

3.0

±12.0

±30

3.0

237.3

6.0

2.02

+150

-55 to +150

Unit

kV/μs

°C

Remarks

VGS=-30V

Note *1

Note *2

Note *3

VDS < 600V

Note *4

Tc=25°C

Ta=25°C

Gate(G)

Source(S)

Equivalent circuit schematic

Drain(D)

Note *1 Tch< 150°C

Note *2 Starting Tch=25°C, I

=1.2A, L=302mH, V

=60V, R

=50Ω

limited by maximum channel temperrature and avalanche current.

See to ‘Avalanche Energy’ graph.

Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.

See to ‘Transient Thermal impedance’ graph.

Note *4 I

< -I

, -di/dt=50A/μs, Vcc < BV

DSS

, Tch < 150°C

Electrical characteristics (T

=25°C unless otherwise specified)

Item

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Forward transcondutance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on time t

Turn-off time t

off

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

Symbol

DSS

GS(th)

DSS

GSS

DS(on)

iss

oss

rss

(on)

(off)

trr

Test Conditions

= 250

=0V

= 250

=25°C

=600V V

=0V

=125°C

=480V V

=0V

=±30V V

=0V

=1.5A V

=10V

=1.5A V

=25V

=0V

f=1MHz

=300V I

=1.5A

=10V

=10

=250V

=3.0A

=10V

=3.0A V

=0V T

=25°C

=3.0A V

=0V

-di/dt=100A/μs T

=25°C

Min.

600

3.0

Typ.

Max.

5.0

250

100

3.3

500

5.0

7.5

8.5

4.2

1.50

Units

μA

1.5

2.64

3.0

330

2.5

5.0

5.5

2.8

1.00

0.5

2.3

μs

μC

Thermalcharacteristics

Item

Thermal resistance

Symbol

th(ch-c)

th(ch-a)

Test Conditions

channel to case

channel to ambient

Min.

Typ.

Max.

2.083

62.0

Units

°C/W

http://www.fujielectric.co.jp/fdt/scd/

2SK3990-01S Related Products

	2SK3990-01S	2SK3990-01L	2SK3990-01SJ
Description	Power Field-Effect Transistor, 3A I(D), 600V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(S), 3 PIN	Power Field-Effect Transistor, 3A I(D), 600V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, T-PACK(L), 3 PIN	Power Field-Effect Transistor, 3A I(D), 600V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, T-PACK(SJ), D2-PACK, 3 PIN
package instruction	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3	3
Reach Compliance Code	unknow	unknow	unknow
Avalanche Energy Efficiency Rating (Eas)	237.3 mJ	237.3 mJ	237.3 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V	600 V	600 V
Maximum drain current (ID)	3 A	3 A	3 A
Maximum drain-source on-resistance	3.3 Ω	3.3 Ω	3.3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSIP-T3	R-PSSO-G2
Number of components	1	1	1
Number of terminals	2	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	12 A	12 A	12 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	YES
Terminal form	GULL WING	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	1
Shell connection	DRAIN	-	DRAIN
Maximum drain current (Abs) (ID)	3 A	3 A	-
Maximum operating temperature	150 °C	150 °C	-
Maximum power dissipation(Abs)	60 W	60 W	-

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