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SSM3K44FS

Description
TRANSISTOR 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SSM, 2-2H1B, 3 PIN, FET General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size147KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

SSM3K44FS Overview

TRANSISTOR 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SSM, 2-2H1B, 3 PIN, FET General Purpose Small Signal

SSM3K44FS Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
package instructionSSM, 2-2H1B, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)0.1 A
Maximum drain-source on-resistance7 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
SSM3K44FS
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K44FS
High Speed Switching Applications
Analog Switching Applications
Compact package suitable for high-density mounting
Low ON-resistance
: R
DS(ON)
= 4.0
(max) (@V
GS
= 4 V)
: R
DS(ON)
= 7.0
(max) (@V
GS
= 2.5 V)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
30
±20
100
200
150
150
−55
to 150
Unit
V
V
mA
mW
°C
°C
Drain power dissipation (Ta
=
25°C)
Channel temperature
Storage temperature range
JEDEC
JEITA
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
TOSHIBA
2-2H1B
temperature, etc.) may cause this product to decrease in the
Weight: 2.4 mg (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: mounted on an FR4 board (25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad : 0.36mm
2
×3)
Note:
Marking
3
Equivalent Circuit
3
NT
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1
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