Silicon Controlled Rectifier, 370A I(T)RMS, 135000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AB
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | International Rectifier （ Infineon ） |
| package instruction | POST/STUD MOUNT, O-MUPM-H3 |
| Reach Compliance Code | unknown |
| Nominal circuit commutation break time | 16 µs |
| Configuration | SINGLE |
| Critical rise rate of minimum off-state voltage | 500 V/us |
| Maximum DC gate trigger current | 150 mA |
| Maximum DC gate trigger voltage | 2.5 V |
| Maximum holding current | 500 mA |
| JEDEC-95 code | TO-209AB |
| JESD-30 code | O-MUPM-H3 |
| Maximum leakage current | 30 mA |
| Humidity sensitivity level | 1 |
| On-state non-repetitive peak current | 4700 A |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum on-state current | 135000 A |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -40 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | POST/STUD MOUNT |
| Peak Reflow Temperature (Celsius) | 225 |
| Certification status | Not Qualified |
| Maximum rms on-state current | 370 A |
| Off-state repetitive peak voltage | 1200 V |
| Repeated peak reverse voltage | 1200 V |
| surface mount | NO |
| Terminal form | HIGH CURRENT CABLE |
| Terminal location | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Trigger device type | SCR |
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