S23AFH6B datasheet, PDF - EEWORLD Datasheet

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S23AFH6B: DescriptionSilicon Controlled Rectifier, 430A I(T)RMS, 275000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB,; CategoryAnalog mixed-signal IC Trigger device; File Size254KB，6 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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S23AFH6B Overview

Silicon Controlled Rectifier, 430A I(T)RMS, 275000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB,

S23AFH6B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	DISK BUTTON, O-CEDB-N2
Reach Compliance Code	unknown
Nominal circuit commutation break time	15 µs
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	500 V/us
Maximum DC gate trigger current	150 mA
Maximum DC gate trigger voltage	2.5 V
Maximum holding current	500 mA
JEDEC-95 code	TO-200AB
JESD-30 code	O-CEDB-N2
Maximum leakage current	45 mA
Humidity sensitivity level	1
On-state non-repetitive peak current	5400 A
Number of components	1
Number of terminals	2
Maximum on-state current	275000 A
Maximum operating temperature	140 °C
Minimum operating temperature	-40 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Peak Reflow Temperature (Celsius)	225
Certification status	Not Qualified
Maximum rms on-state current	430 A
Off-state repetitive peak voltage	600 V
Repeated peak reverse voltage	600 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	END
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR

S23AFH6B Related Products

	S23AFH6B	S23AF6A	S23AF8B	S23AFH8B	S23AF6B
Description	Silicon Controlled Rectifier, 430A I(T)RMS, 275000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB,	Silicon Controlled Rectifier, 430A I(T)RMS, 275000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB	Silicon Controlled Rectifier, 430A I(T)RMS, 275000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB	Silicon Controlled Rectifier, 430A I(T)RMS, 275000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB	Silicon Controlled Rectifier, 430A I(T)RMS, 275000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB,
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknow
Nominal circuit commutation break time	15 µs	12 µs	15 µs	20 µs	15 µs
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Critical rise rate of minimum off-state voltage	500 V/us	500 V/us	500 V/us	500 V/us	500 V/us
Maximum DC gate trigger current	150 mA	150 mA	150 mA	150 mA	150 mA
Maximum DC gate trigger voltage	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
Maximum holding current	500 mA	500 mA	500 mA	500 mA	500 mA
JEDEC-95 code	TO-200AB	TO-200AB	TO-200AB	TO-200AB	TO-200AB
JESD-30 code	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2
Maximum leakage current	45 mA	30 mA	30 mA	45 mA	30 mA
Humidity sensitivity level	1	1	1	1	1
On-state non-repetitive peak current	5400 A	5400 A	5400 A	5400 A	5400 A
Number of components	1	1	1	1	1
Number of terminals	2	2	2	2	2
Maximum on-state current	275000 A	275000 A	275000 A	275000 A	275000 A
Maximum operating temperature	140 °C	125 °C	125 °C	140 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
Peak Reflow Temperature (Celsius)	225	225	225	225	225
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	430 A	430 A	430 A	430 A	430 A
Off-state repetitive peak voltage	600 V	600 V	800 V	800 V	600 V
Repeated peak reverse voltage	600 V	600 V	800 V	800 V	600 V
surface mount	YES	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	END	END	END	END	END
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Trigger device type	SCR	SCR	SCR	SCR	SCR

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