Standard SRAM, 256X4, 500ns, NMOS, CDIP22, HERMETIC SEALED, SIDE BRAZED, DIP-22
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | AMD |
Parts packaging code | DIP |
package instruction | DIP, DIP22,.4 |
Contacts | 22 |
Reach Compliance Code | unknown |
ECCN code | 3A001.A.2.C |
Maximum access time | 500 ns |
I/O type | SEPARATE |
JESD-30 code | R-CDIP-T22 |
JESD-609 code | e0 |
length | 27.432 mm |
memory density | 1024 bit |
Memory IC Type | STANDARD SRAM |
memory width | 4 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 22 |
word count | 256 words |
character code | 256 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -55 °C |
organize | 256X4 |
Output characteristics | 3-STATE |
Exportable | YES |
Package body material | CERAMIC, METAL-SEALED COFIRED |
encapsulated code | DIP |
Encapsulate equivalent code | DIP22,.4 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
Certification status | Not Qualified |
Filter level | MIL-STD-883 Class C |
Maximum seat height | 5.08 mm |
Maximum slew rate | 0.06 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | NMOS |
Temperature level | MILITARY |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
width | 10.16 mm |