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BC860BT/R

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size157KB,4 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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BC860BT/R Overview

Transistor

BC860BT/R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)200
JESD-609 codee3
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
Nominal transition frequency (fT)100 MHz

BC860BT/R Related Products

BC860BT/R BC860CT/R BC859CT/R
Description Transistor Transistor Transistor
Is it Rohs certified? conform to conform to conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknown unknown unknown
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Configuration Single Single Single
Minimum DC current gain (hFE) 200 420 420
JESD-609 code e3 e3 e3
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP
Maximum power dissipation(Abs) 0.3 W 0.3 W 0.3 W
surface mount YES YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz

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