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WPDE4M4VB-60MJM

Description
EDO DRAM, 4MX4, 60ns, CMOS, PDSO24,
Categorystorage    storage   
File Size368KB,7 Pages
ManufacturerWhite Electronic Designs Corporation
Websitehttp://www.wedc.com/
Download Datasheet Parametric View All

WPDE4M4VB-60MJM Overview

EDO DRAM, 4MX4, 60ns, CMOS, PDSO24,

WPDE4M4VB-60MJM Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerWhite Electronic Designs Corporation
Reach Compliance Codeunknown
Maximum access time60 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-J24
JESD-609 codee0
memory density16777216 bit
Memory IC TypeEDO DRAM
memory width4
Number of terminals24
word count4194304 words
character code4000000
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize4MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Encapsulate equivalent codeSOJ24/26,.34
Package shapeRECTANGULAR
Package formSMALL OUTLINE
power supply3.3 V
refresh cycle2048
self refreshNO
Maximum standby current0.001 A
Maximum slew rate0.11 mA
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
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