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X28HC256KMB-70

Description
EEPROM, 32KX8, 70ns, Parallel, CMOS, CPGA28, CERAMIC, PGA-28
Categorystorage    storage   
File Size190KB,23 Pages
ManufacturerXicor Inc.
Download Datasheet Parametric View All

X28HC256KMB-70 Overview

EEPROM, 32KX8, 70ns, Parallel, CMOS, CPGA28, CERAMIC, PGA-28

X28HC256KMB-70 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerXicor Inc.
package instructionPGA, PGA28,5X6
Reach Compliance Codeunknown
Maximum access time70 ns
Other features100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION
command user interfaceNO
Data pollingYES
Data retention time - minimum100
Durability1000000 Write/Erase Cycles
JESD-30 codeR-CPGA-P28
JESD-609 codee0
length16.51 mm
memory density262144 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize32KX8
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codePGA
Encapsulate equivalent codePGA28,5X6
Package shapeRECTANGULAR
Package formGRID ARRAY
page size128 words
Parallel/SerialPARALLEL
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Maximum seat height4.62 mm
Maximum standby current0.0005 A
Maximum slew rate0.06 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal pitch2.54 mm
Terminal locationPERPENDICULAR
switch bitYES
width14 mm
Maximum write cycle time (tWC)5 ms
256K
X28HC256
5 Volt, Byte Alterable EEPROM
DESCRIPTION
32K x 8 Bit
FEATURES
• Access time: 70ns
• Simple byte and page write
—Single 5V supply
—No external high voltages or V
PP
control circuits
—Self-timed
—No erase before write
—No complex programming algorithms
—No overerase problem
• Low power CMOS
—Active: 60mA
—Standby: 500µA
• Software data protection
—Protects data against system level inadvertent
writes
• High speed page write capability
• Highly reliable Direct Write
cell
—Endurance: 1,000,000 cycles
—Data retention: 100 years
• Early end of write detection
—DATA polling
—Toggle bit polling
The X28HC256 is a second generation high perfor-
mance CMOS 32K x 8 EEPROM. It is fabricated with
Xicor’s proprietary, textured poly floating gate technol-
ogy, providing a highly reliable 5 Volt only nonvolatile
memory.
The X28HC256 supports a 128-byte page write opera-
tion, effectively providing a 24µs/byte write cycle, and
enabling the entire memory to be typically rewritten in
less than 0.8 seconds. The X28HC256 also features
DATA Polling and Toggle Bit Polling, two methods of
providing early end of write detection. The X28HC256
also supports the JEDEC standard Software Data Pro-
tection feature for protecting against inadvertent writes
during power-up and power-down.
Endurance for the X28HC256 is specified as a mini-
mum 1,000,000 write cycles per byte and an inherent
data retention of 100 years.
BLOCK DIAGRAM
256Kbit
EEPROM
Array
X Buffers
Latches and
Decoder
A
0
–A
14
Address
Inputs
Y Buffers
Latches and
DECODER
I/O Buffers
and Latches
CE
OE
WE
V
CC
V
SS
Control
Logic and
Timing
I/O
0
–I/O
7
Data Inputs/Outputs
REV 1.1 2/1/01
www.xicor.com
Characteristics subject to change without notice.
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