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MOD1009S

Description
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED PACKAGE-12
CategoryDiscrete semiconductor    The transistor   
File Size192KB,4 Pages
ManufacturerSENSITRON
Websitehttp://www.sensitron.com/
Download Datasheet Parametric View All

MOD1009S Overview

Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED PACKAGE-12

MOD1009S Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSENSITRON
package instructionFLANGE MOUNT, R-CDFM-P12
Contacts12
Reach Compliance Codecompliant
Other featuresHIGH SPEED
Maximum collector current (IC)60 A
Collector-emitter maximum voltage600 V
ConfigurationBRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE
JESD-30 codeR-CDFM-P12
Number of components4
Number of terminals12
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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