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BUX84AS

Description
2A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size351KB,60 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

BUX84AS Overview

2A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

BUX84AS Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionPLASTIC, TO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)4 MHz
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(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
SPECIFICATIONS FEATURES:
VCEO(sus) 450 V
VCES(sus) 1000 V
Fall time = 0.3
µs
(typ) at IC = 1.0 A
VCE(sat) = 1.0 V (max) at IC = 1.0 A, IB = 0.2 A
SWITCHMODE
NPN Silicon Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
The BUX85 is designed for high voltage, high speed power switching applications
like converters, inverters, switching regulators, motor control systems.
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 7
Maximum Lead Temperature for Soldering Purpose:
1/8″ from Case for 5 Seconds
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Junction Temperature Range
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
Reverse Base Current — Peak
Base Current
— Continuous
— Peak (1)
Collector Current
— Continuous
— Peak (1)
Emitter Base Voltage
Collector–Emitter Voltage
Collector–Emitter Voltage
Characteristic
Rating
3–408
x
10%.
VCEO(sus)
Symbol
Symbol
TJ, Tstg
VEBO
VCES
R
θJC
R
θJA
IC
ICM
IBM
IB
IBM
PD
TL
Motorola Bipolar Power Transistor Device Data
BUX84
800
400
– 65 to + 150
62.5
Max
0.75
1.0
50
400
2.5
2
3.0
1
5
275
2 AMPERES
POWER TRANSISTOR
NPN SILICON
450 VOLTS
50 WATTS
BUX85
BUX85
1000
450
CASE 221A–06
TO–220AB
Watts
mW/
_
C
_
C/W
_
C/W
Unit
Unit
Adc
Adc
Adc
Vdc
Vdc
Vdc
_
C
_
C
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