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PDC4UL6484H-102T-S

Description
DRAM Module, 4MX64, 6ns, CMOS, DIMM-168
Categorystorage    storage   
File Size188KB,13 Pages
ManufacturerFUJITSU
Websitehttp://edevice.fujitsu.com/fmd/en/index.html
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PDC4UL6484H-102T-S Overview

DRAM Module, 4MX64, 6ns, CMOS, DIMM-168

PDC4UL6484H-102T-S Parametric

Parameter NameAttribute value
MakerFUJITSU
package instructionDIMM, DIMM168
Reach Compliance Codeunknown
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
Maximum access time6 ns
Other featuresAUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX
Maximum clock frequency (fCLK)100 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N168
length133.35 mm
memory density268435456 bit
Memory IC TypeDRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals168
word count4194304 words
character code4000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX64
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM168
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height31.75 mm
self refreshYES
Maximum standby current0.0024 A
Maximum slew rate1.56 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
width3.81 mm
data sheet
April 1998
Revision 1.0
PDC4UL6484H-(102/103)T-S
32MByte (4M x 64) CMOS, PC/100
Synchronous DRAM Module
General Description
The PDC4UL6484H-(102/103)T-S is a high performance, 32-megabyte synchronous, dynamic RAM module organized as 4M
words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.
The module utilizes sixteen Fujitsu MB81F16822D-(102/103)LFN CMOS 2Mx8 synchronous dynamic RAMs in surface mount
package (TSOP) on an epoxy laminated substrate. Each device is accompanied by a decoupling capacitor for improved noise
immunity.
A 256 Byte Serial EEPROM contains the module configuration information.
Features
• High Density
• Cycle Time:
• Low Power:
32MByte
10ns
Active 5.6W
• LVTTL-compatible inputs and outputs
• Separate power and ground planes to improve noise immunity
• Single power supply of 3.3V±0.3V
• Height: 1.250 inch
ABSOLUTE MAXIMUM RATINGS
Item
Voltage on any pin relative to V
SS
Power Dissipation
Operating Temperature
Storage Temperate
Short Circuit Output Current
Symbol
V
T
P
T
T
opr
T
stg
I
OS
Ratings
-0.5 to +4.6
20.8
0 to +70
-55 to +125
Unit
V
W
°
C
°
C
mA
±
50
RECOMMENDED DC OPERATING CONDITIONS
(T
A
= 0 to +70
°C)
Symbol
V
CC
V
SS
V
IH
V
IL
Parameter
Supply Voltage
Ground
Input High voltage
Input Low voltage
Min
3.0
0
2.0
-0.5
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+0.5
0.8
Unit
V
V
V
V
Fujitsu Microelectronics, Inc./Fujitsu Mikroelektronik GmbH
1

PDC4UL6484H-102T-S Related Products

PDC4UL6484H-102T-S PDC4UL6484H-103T-S
Description DRAM Module, 4MX64, 6ns, CMOS, DIMM-168 DRAM Module, 4MX64, 6ns, CMOS, DIMM-168
Maker FUJITSU FUJITSU
package instruction DIMM, DIMM168 DIMM, DIMM168
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
access mode DUAL BANK PAGE BURST DUAL BANK PAGE BURST
Maximum access time 6 ns 6 ns
Other features AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX
Maximum clock frequency (fCLK) 100 MHz 100 MHz
I/O type COMMON COMMON
JESD-30 code R-XDMA-N168 R-XDMA-N168
length 133.35 mm 133.35 mm
memory density 268435456 bit 268435456 bit
Memory IC Type DRAM MODULE DRAM MODULE
memory width 64 64
Number of functions 1 1
Number of ports 1 1
Number of terminals 168 168
word count 4194304 words 4194304 words
character code 4000000 4000000
Operating mode SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C
organize 4MX64 4MX64
Output characteristics 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM
Encapsulate equivalent code DIMM168 DIMM168
Package shape RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
power supply 3.3 V 3.3 V
Certification status Not Qualified Not Qualified
refresh cycle 4096 4096
Maximum seat height 31.75 mm 31.75 mm
self refresh YES YES
Maximum standby current 0.0024 A 0.0024 A
Maximum slew rate 1.56 mA 1.56 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V
surface mount NO NO
technology CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD
Terminal pitch 1.27 mm 1.27 mm
Terminal location DUAL DUAL
width 3.81 mm 3.81 mm

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