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VS10P12LCI

Description
Trans Voltage Suppressor Diode, 800W, 12V V(RWM), Bidirectional, 6 Element, Silicon, PLASTIC, VSIP-10
CategoryDiscrete semiconductor    diode   
File Size51KB,4 Pages
ManufacturerProTek Devices
Websitehttp://www.protekdevices.com/
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VS10P12LCI Overview

Trans Voltage Suppressor Diode, 800W, 12V V(RWM), Bidirectional, 6 Element, Silicon, PLASTIC, VSIP-10

VS10P12LCI Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerProTek Devices
package instructionR-PSIP-T10
Contacts10
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW CAPACITANCE
Minimum breakdown voltage13.3 V
Breakdown voltage nominal value13.3 V
Shell connectionISOLATED
Maximum clamping voltage19.5 V
Configuration3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PSIP-T10
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation800 W
Number of components6
Number of terminals10
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)245
polarityBIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage12 V
surface mountNO
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

VS10P12LCI Related Products

VS10P12LCI VS10P15LCI VSB10P05LC VSB10P15LCI
Description Trans Voltage Suppressor Diode, 800W, 12V V(RWM), Bidirectional, 6 Element, Silicon, PLASTIC, VSIP-10 Trans Voltage Suppressor Diode, 800W, 15V V(RWM), Bidirectional, 6 Element, Silicon, PLASTIC, VSIP-10 Trans Voltage Suppressor Diode, 3400W, 5V V(RWM), Bidirectional, 8 Element, Silicon, PLASTIC, VSIP-10 Trans Voltage Suppressor Diode, 3400W, 15V V(RWM), Bidirectional, 6 Element, Silicon, PLASTIC, VSIP-10
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker ProTek Devices ProTek Devices ProTek Devices ProTek Devices
package instruction R-PSIP-T10 R-PSIP-T10 R-PSIP-T10 R-PSIP-T10
Contacts 10 10 10 10
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Other features LOW CAPACITANCE LOW CAPACITANCE LOW CAPACITANCE LOW CAPACITANCE
Minimum breakdown voltage 13.3 V 16.7 V 6 V 16.7 V
Breakdown voltage nominal value 13.3 V 17.7 V 6 V 17.7 V
Maximum clamping voltage 19.5 V 24.4 V 9.8 V 24.4 V
Configuration 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS COMPLEX 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code R-PSIP-T10 R-PSIP-T10 R-PSIP-T10 R-PSIP-T10
JESD-609 code e0 e0 e0 e0
Humidity sensitivity level 1 1 1 1
Maximum non-repetitive peak reverse power dissipation 800 W 800 W 3400 W 3400 W
Number of components 6 6 8 6
Number of terminals 10 10 10 10
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) 245 245 245 245
polarity BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 12 V 15 V 5 V 15 V
surface mount NO NO NO NO
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Shell connection ISOLATED ISOLATED - ISOLATED

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