Direct Attach DA3547™ LEDs
CxxxDA3547-Sxxx00
Data Sheet
Cree’s Direct Attach DA3547 LEDs are the next generation of solid-state LED emitters that combine highly efficient
InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value
for the TV-backlighting and general-illumination markets. The DA3547 LEDs are among the brightest in the top-view
market while delivering a low forward voltage, resulting in a very bright and highly efficient solution. The bondpad-
down design allows for eutectic die attach, eliminating the need for wire bonds, and enables superior performance
from improved thermal management. The design is optimally suited for industry-standard top-view packages.
FEATURES
•
•
•
•
•
•
•
Rectangular LED RF Performance
–
450 & 460 nm – 76 mW min
High Reliability - Eutectic Attach
Low Forward Voltage (Vf) – 3.1 V Typical at 50 mA
Maximum DC Forward Current – 150 mA
1000-V ESD Threshold Rating
InGaN Junction-Down Design for Improved Thermal
Management
No Wire Bonds Required
APPLICATIONS
•
•
•
Large LCD Backlighting
–
Television
General Illumination
Medium LCD Backlighting
–
–
•
•
Portable PCs
Monitors
LED Video Displays
White LEDs
CxxxDA3547-Sxxx00 Chip Diagram
Top View
DA3547 LED
350 x 470 μm
Die Cross Section
Bottom View
.A
CPR3EL Rev
Data Sheet:
Anode (+)
296 x 90 μm
Gap 90 μm
Cathode (-)
296 x 236 μm
t = 155 μm
Subject to change without notice.
www.cree.com
1
Maximum Ratings at T
A
= 25°C
Notes 1,3, & 4
DC Forward Current
Peak Forward Current (1/10 duty cycle @ 1 kHz)
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Note 2
Typical Electrical/Optical Characteristics at T
A
= 25°C, If = 50 mA
Part Number
Forward Voltage (V
f
, V)
Min.
C450DA3547-Sxxx00
C460DA3547-Sxxx00
Mechanical Specifications
Description
P-N Junction Area (μm)
Chip Bottom Area (μm)
Chip Top Area (μm)
Chip Thickness (μm)
AuSn Bond Pad Width – Anode (um)
AuSn Bond Pad Length – Anode (um)
AuSn Bond Pad Width – Cathode (um)
AuSn Bond Pad Length – Cathode (um)
Bond Pad Gap (μm)
AuSn Bond Pad Thickness (μm)
2.8
2.8
Typ.
3.1
3.1
Max.
3.4
3.4
Note 3
CxxxDA3547-Sxxx00
150 mA
200 mA
150°C
5 V
-40°C to +100°C
-40°C to +100°C
1000 V
Class 2
Reverse Current
[I(Vr=5V), μA]
Max.
2
2
Full Width Half Max
(λ
D
, nm)
Typ.
20
21
CxxxDA3547-Sxxx00
Dimension
296 x 416
350 x 470
200 x 320
155
90
296
236
296
90
3
Tolerance
±35
±35
±35
±15
±15
±35
±35
±35
±15
±0.5
Notes:
1.
2.
3.
4.
Maximum ratings are package-dependent. The above ratings were determined using a chip sub-mount on MCPCB (with silicone encapsulation and
intrinsic AuSn metal die attach) for characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific
package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET).
The RAET procedures are designed to approximate the maximum ESD ratings shown.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated
at 50 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average
values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4
packages (with Hysol OS4000 epoxy encapsulant and intrinsic AuSn metal die attach). Optical characteristics measured in an integrating sphere
using Illuminance E.
The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be
designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance.
160
140
Maximum Forward Current (mA)
120
100
80
60
40
20
0
50
75
100
125
150
175
Rth
j-a
= 10
Rth
j-a
= 20
Rth
j-a
= 30
Rth
j-a
= 40
C/W
C/W
C/W
C/W
Ambient Temperature (C)
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA3547 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3EL Rev. A
Standard Bins for CxxxDA3547-Sxxx00
LED chips are sorted to the
radiant flux
and
dominant wavelength
bins shown. A sorted die sheet contains die
from only one bin. Sorted die kit (CxxxDA3547-Sxxxxx) orders may be filled with any or all bins (CxxxDA3547-xxxxx)
contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 50 mA.
Radiant Flux (mW)
C450DA3547-S07600
C450DA3547-0313
C450DA3547-0314
C450DA3547-0310
C450DA3547-0306
C450DA3547-0315
C450DA3547-0311
C450DA3547-0307
C450DA3547-0316
C450DA3547-0312
C450DA3547-0308
88
C450DA3547-0309
82
C450DA3547-0305
76
445
447.5
450
Dominant Wavelength (nm)
C460DA3547-S07600
452.5
455
Radiant Flux (mW)
C460DA3547-0313
C460DA3547-0314
C460DA3547-0310
C460DA3547-0306
C460DA3547-0315
C460DA3547-0311
C460DA3547-0307
C460DA3547-0316
C460DA3547-0312
C460DA3547-0308
88
C460DA3547-0309
82
C460DA3547-0305
76
455
457.5
460
Dominant Wavelength (nm)
462.5
465
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA3547 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3EL Rev. A
Relative Light Int
150%
100%
50%
0%
0
50
100
150
Characteristic Curves
If (mA)
These are representative measurements for the DA LED product. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.
Forward Current vs. Forward Voltage
150
Forward Current vs. Forward Voltage
150
2
Wavelength Shift vs. Forward Current
Dominant Wavelength Shift (nm)
If (mA)
100
1
100
If (mA)
0
50
-1
0
-2 0
1
50
2
3
4
100
5
150
0
50
0
0
1
2
3
4
5
Vf (V)
Vf (V)
If (mA)
300%
100
250%
Relative Intensity vs. Forward Current
Relative Intensity vs. Wavelength
Relative Intensity vs. Wavelength
100
Relative Intensity
Relative Light Intensity
80
Relative Intensity
80
200%
60
150%
100%
40
60
40
50%
20
0%
0
0
350
400
50
450
100
150
550
600
20
0
350
400
450
500
550
600
If (mA)
500
Wavelength (nm)
Wavelength (nm)
Wavelength Shift vs. Forward Current
2
Dominant Wavelength Shift (nm)
1
0
-1
-2
0
50
100
150
If (mA)
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA3547 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
4
CPR3EL Rev. A
Radiation Pattern
This is a representative radiation pattern for the DA LED product. Actual patterns will vary slightly for each chip.
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA3547 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
5
CPR3EL Rev. A
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