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SF2008G

Description
10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size497KB,2 Pages
ManufacturerGaomi Xinghe Electronics
Websitehttp://www.sddzg.com
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SF2008G Overview

10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB

SF2008G Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionGREEN, PLASTIC PACKAGE-3
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingPURE TIN
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureCOMMON CATHODE, 2 ELEMENTS
Shell connectionCATHODE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
applicationEFFICIENCY
Phase1
Maximum reverse recovery time0.0350 us
Maximum repetitive peak reverse voltage600 V
Maximum average forward current10 A
Maximum non-repetitive peak forward current150 A
星合电子
XINGHE ELECTRONICS
Features
High efficiency, low VF
High current capability
High reliability
High surge current capability
Low power loss.
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application
SF2001G - SF2008G
20.0 AMPS. Glass Passivated Super Fast Rectifiers
TO-220AB
Mechanical Data
Cases: TO-220AB Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260
o
C/10 seconds .16”,(4.06mm) from case.
Weight: 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
@T
C
= 100 C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 10A
Maximum DC Reverse Current @ T
A
=25
o
C
at Rated DC Blocking Voltage @ T
A
=100
o
C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Symbol
SF
SF
SF
SF
SF
SF
SF
SF
2001G 2002G 2003G 2004G 2005G 2006G 2007G 2008G
Units
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
50
35
50
100 150 200 300 400 500 600
70 105 140 210 280 350 420
100 150 200 300 400 500 600
20
150
0.975
1.3
5.0
400
35
80
2.5
-65 to +150
-65 to +150
1.7
V
uA
uA
nS
pF
o
C/W
o
C
o
C
Cj
R
θJC
T
J
Storage Temperature Range
T
STG
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Thermal Resistance from Junction to Case Mounted on Heatsink size of 3” x 5” x 0.25” Al-Plate.
1
GAOMI XINGHE ELECTRONICSCO.,LTD.    WWW.SDDZG.COM     TEL:0536-2210359       QQ:464768017

SF2008G Related Products

SF2008G SF2001G SF2002G SF2003G SF2004G SF2005G SF2006G SF2007G
Description 10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB 20 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AB 20 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 500 V, SILICON, RECTIFIER DIODE, TO-220AB

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