MWI 50-12T7T
Six-Pack
Trench IGBT
I
C25
= 80 A
= 1200 V
V
CES
V
CE(sat) typ.
= 1.7 V
Part name
(Marking on product)
MWI 50-12T7T
25, 26
15, 16
1
17
2
NTC
5
6
9
10
23, 24
21, 22
19, 20
E72873
18
Pin configuration see outlines.
3
4
27, 28
7
8
11
12
13, 14
Features:
• Trench IGBT technology
• low saturation voltage
• low switching losses
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient
for easy parallelling
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• solderable pins for PCB mounting
• package with copper base plate
Application:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode and
resonant-mode power supplies
Package:
• "E2-Pack" standard outline
• Insulated copper base plate
• Soldering pins for PCB mounting
• Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
20100831d
© 2010 IXYS All rights reserved
1-7
MWI 50-12T7T
Output Inverter T1 - T6
Ratings
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
C
ies
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
RBSOA
SCSOA
t
SC
I
SC
R
thJC
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
Conditions
T
VJ
= 25°C
continuous
transient
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
I
C
= 50 A; V
GE
= 15 V
on chip level
I
C
= 2 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V
V
GE
= ±20 V
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= ±15 V; I
C
= 50 A
inductive load
V
CE
= 600 V; I
C
= 50 A
V
GE
= ±15 V; R
G
= 18
W
L
S
= 70 nH
V
GE
= ±15 V; R
G
= 18
W
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
min.
typ.
max.
1200
±20
±30
80
50
270
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
pF
nC
ns
ns
ns
ns
mJ
mJ
1.7
2.0
5
5.8
2
2.15
6.5
2
400
3500
470
90
50
520
90
5
6.5
100
T
VJ
= 125°C
V
CEK
= 1150 V
T
VJ
= 125°C
A
V
CE
= 900 V; V
GE
= ±15 V;
R
G
= 18
W;
non-repetitive
(per IGBT)
10
200
0.46
µs
A
K/W
Output Inverter D1 - D6
Ratings
Symbol
V
RRM
I
F25
I
F80
V
F
Q
rr
I
RM
t
rr
E
rec
R
thJC
Definitions
max. repetitve reverse voltage
forward current
forward voltage
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
Conditions
T
VJ
= 25°C
T
C
= 25°C
T
C
= 80°C
I
F
= 60 A; V
GE
= 0 V
V
R
= 600 V
di
F
/dt = -1200 A/µs
I
F
= 60 A; V
GE
= 0 V
(per diode)
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 125°C
min.
typ.
max.
1200
85
57
Unit
V
A
A
V
V
µC
A
ns
mJ
1.95
1.95
8
60
350
2.5
2.2
0.6
T
C
= 25°C unless otherwise stated
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
20100831d
© 2010 IXYS All rights reserved
2-7
MWI 50-12T7T
Temperature Sensor NTC
Symbol
R
25
B
25/50
Definitions
resistance
Conditions
T
C
= 25°C
min.
4.75
Ratings
typ. max.
5.0
5.25
3375
Unit
kW
K
Module
Symbol
T
VJ
T
VJM
T
stg
V
ISOL
CTI
M
d
d
S
d
A
R
pin-chip
R
thCH
Weight
Definitions
operating temperature
max. virtual junction temperature
storage temperature
isolation voltage
comparative tracking index
mounting torque (M5)
creep distance on surface
strike distance through air
resistance pin to chip
thermal resistance case to heatsink
Conditions
min.
-40
-40
Ratings
typ. max.
125
150
125
2500
200
Unit
°C
°C
°C
V~
Nm
mm
mm
I
ISOL
< 1 mA; 50/60 Hz
2.7
6
6
5
with heatsink compound
0.02
180
3.3
mW
K/W
g
Equivalent Circuits for Simulation
I
V
0
R
0
Ratings
Conditions
T1 - T6
D1 - D6
T
VJ
= 125°C
T
VJ
= 125°C
min.
typ.
1.0
20
1.1
14.2
max.
Unit
V
mW
V
mW
Symbol
V
0
R
0
V
0
R
0
Definitions
IGBT
Diode
IXYS reserves the right to change limits, test conditions and dimensions.
20100831d
© 2010 IXYS All rights reserved
3-7
MWI 50-12T7T
Circuit Diagram
25, 26
15, 16
1
17
NTC
2
5
6
9
10
23, 24
21, 22
19, 20
18
3
4
27, 28
7
8
11
12
13, 14
Outline Drawing
3.5
-0.5
Y
Ø 2.1; l=6
Z
Dimensions in mm (1 mm = 0.0394“)
Detail X
±0.02
Detail Y
15°
±1°
20.5
±0.1
7
-0.5
17
±0.5
0.8
baseplate typ. 100 µm convex
over 75 mm before mounting
Detail Z
82.3
75.7
72.7
38.88
23.64
42.69
57.93
61.74
19.83
73.17
76.98
0
86.1
±0.1
Ø6
+0.3
Ø 2.5
Ø 2.1
1.5
0.8
1.2
±0.05
±0.05
B
24 23
±0.2
X
22 21
20 19
18 17
16
15
20.95
11.43
7.62
0
7.62
38.4
32
±0.2
25
26
Ø5.5
45
11
27
28
1 2
3 4
5 6
7 8
9 10
1112
14
13
A
11.43
20.95
31.26
50.31
54.12
61.74
65.55
16.02
19.83
38.88
27.45
42.69
93
107.5
±0.2
±0.3
Product Marking
Ordering
Standard
Part Name
MWI 50-12T7T
Marking on Product
MWI50-12T7T
73.17
76.98
j n0.4 A B
Delivering Mode Base Qty Ordering Code
Box
6
501972
20100831d
IXYS reserves the right to change limits, test conditions and dimensions.
6
© 2010 IXYS All rights reserved
4-7
MWI 50-12T7T
Inverter T1 - T6
100
V
GE
= 15 V
80
T
VJ
= 125°C
T
VJ
= 25°C
80
100
V
GE
= 13 V
15 V
17 V
19 V
11 V
I
C
[A]
60
I
C
[A]
60
T
VJ
= 125°C
40
9V
40
20
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
0
1
2
3
4
5
V
CE
[V]
Fig. 1 Typ. outpurt characteristics
V
CE
[V]
Fig. 2 Typ. outpurt characteristics
100
V
CE
= 20 V
80
20
15
10
I
C
= 50 A
V
CE
= 600 V
I
C
[A]
60
V
GE
[V]
5
0
-5
40
20
T
VJ
= 125°C
T
VJ
= 25°C
4
5
6
7
8
9
10
11
12
-10
-15
0
0
100
200
300
400
500
600
V
GE
[V]
Fig. 3 Typ. transfer characteristics
14
12
10
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 18
Ω
T
VJ
= 125°C
Eon
E
off
Q
g
[nC]
Fig. 4 Typ. turn-on gate charge
12
10
8
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 50 A
T
VJ
= 125°C
Eoff
Eon
E
8
E
[mJ]
6
4
[mJ]
6
4
2
0
E
rec
2
0
10
Erec
0
20
40
60
80
100
20
30
40
50
60
70
I
C
[A]
Fig. 5 Typical switching losses
versus collector current impedance
IXYS reserves the right to change limits, test conditions and dimensions.
R
G
[Ω]
Fig. 6 Typical switching losses
versus gate resistancae
20100831d
© 2010 IXYS All rights reserved
5-7
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