3 V, WIDEBAND
MEDIUM POWER SI MMIC AMPLIFIER
FEATURES
• 7 dBm P
1dB
TYPICAL AT 1.9 GHz
• LOW VOLTAGE:
3 Volts
• WIDE BANDWIDTH:
2.9 GHz at -3 dB (UPC2762T)
Gain, G
S
(dB)
24
22
UPC2763T
20
18
16
14
UPC2762T
12
UPC2762T
UPC2763T
GAIN vs. FREQUENCY
V
CC
= 3.0 V, I
CC
= 27 mA
• HIGH GAIN:
20 dB at 1.9 GHz (UPC2763T)
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
The UPC2762T and UPC2763T are Silicon Monolithic inte-
grated circuits which are manufactured using the NESAT III
process. The NESAT III process produces transistors with f
T
approaching 20 GHz. These amplifiers were designed for 900
MHz and 1.9 GHz receivers in cellular, cordless telephone
and PCN applications. Operating on a 3 volt supply these ICs
are ideally suited for hand-held, portable designs.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
10
8
100
300
1000
3000
Frequency, f (MHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, Z
L
= Z
S
= 50Ω, V
CC
= 3.0 V)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
G
S
f
U1
P
1dB
P
SAT
NF
RL
IN
RL
OUT
ISOL
OIP3
R
TH (J-A)
PARAMETERS AND CONDITIONS
Circuit Current (no signal)
Small Signal Gain,
f = 900 MHz
f = 1900 MHz
UNITS
mA
dB
dB
GHz
dBm
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
°C/W
°C/W
6
5.5
8
9
22
20
11
11.5
2.7
+5.5
+4.5
MIN
UPC2762T
T06
TYP
27
13
14.5
2.9
+8
+7
9
8.5
6.5
7
9
8.5
11
12
27
25
+12
+9
620
230
8
8.5
8
9
5
6
25
24
MAX
35
16
17.5
16
16.5
2.0
+7
+4
MIN
UPC2763T
T06
TYP
27
20
19.5
2.4
+9.5
+6.5
11
8
5.5
5.5
11
12
8
9
30
29
+17
+11
620
230
7.0
7.0
MAX
35
23
22.5
Upper Limit Operating Frequency
(The gain at fu is 3 dB down from the gain at 0.1 GHz)
Output Power at 1 dB Compression Point, f = 900 MHz
f = 1900 MHz
Saturated Output Power, f = 900 MHz
f = 1900 MHz
Noise Figure,
Input Return Loss,
Output Return Loss,
Isolation,
f = 900 MHz
f = 1900 MHz
f = 900 MHz
f = 1900 MHz
f = 900 MHz
f = 1900 MHz
f = 900 MHz
f = 1900 MHz
f = 1900, 1902 MHz
Thermal Resistance (Junction to Ambient)
Free Air
Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB
SSB Output Third Order Intercept Point
f = 900, 902 MHz
Note:
1.The gain at f
U
is 3 dB down from the gain at 100 MHz.
California Eastern Laboratories
UPC2762T, UPC2763T
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CC
I
CC
P
IN
P
T
T
OP
T
STG
PARAMETERS
Supply Voltage
Total Supply Current
Input Power
Total Power Dissipation
2
Operating Temperature
Storage Temperature
UNITS
V
mA
dBm
mW
°C
°C
RATINGS
3.6
70
+10
280
-40 to +85
-55 to +150
RECOMMENDED OPERATING CONDITIONS
SYMBOLS
V
CC
T
OP
PARAMETERS
Supply Voltage
Operating Temperature
UNITS MIN
V
°C
2.7
-40
TYP MAX
3
25
3.3
85
TEST CIRCUIT
V
CC
1000 pF
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB (T
A
= 85°C).
50
Ω
IN
1000 pF
1
L = 300 nH
6
4
2, 3, 5
1000 pF
50
Ω
OUT
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
UPC2762T/63T
SUPPLY CURRENT vs.
SUPPLY VOLTAGE
50
UPC2762T/63T
SUPPLY CURRENT vs.
OPERATING TEMPERATURE
50
V
CC
= 3.0 V
Supply Current, I
CC
(mA)
Supply Current, I
CC
(mA)
40
40
30
30
20
20
10
10
0
0
1
2
3
4
0
-60
-40
-20
0
20
40
60
80
100
Supply Voltage, V
CC
(V)
Operating Temperature, T
OP
(°C)
UPC2762T
NOISE FIGURE AND GAIN vs.
FREQUENCY AND VOLTAGE
20
18
UPC2763T
NOISE FIGURE AND GAIN vs.
FREQUENCY AND VOLTAGE
24
22
V
CC
= 3.3 V
Noise Figure, NF (dB)
16
14
12
10
8
NF
6
4
2
0.1
0.3
V
CC
= 2.7 V
G
S
20
Gain, G
S
(dB)
18
16
14
12
10
V
CC
= 3.0 V
V
CC
= 2.7 V
10
V
CC
= 3.3 V
8
6
V
CC
= 3.0 V V
CC
= 2.7 V
4
2
1.0
3.0
7
V
CC
= 3.3 V
NF
5
V
CC
= 3.0 V
V
CC
= 2.7 V
4
3
3.0
6
8
6
0.1
0.3
1.0
Frequency, f (GHz)
Frequency, f (GHz)
Noise Figure, NF (dB)
V
CC
= 3.3 V
V
CC
= 3.0 V
G
S
Gain, G
S
(dB)
UPC2762T, UPC2763T
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
UPC2762T
GAIN vs. FREQUENCY AND TEMPERATURE
18
UPC2763T
GAIN vs. FREQUENCY AND TEMPERATURE
24
T
A
= -40˚C
22
T
A
= +85˚C
T
A
= +25˚C
16
Gain, GS (dB)
Gain, GS (dB)
T
A
= +85˚ C
20
18
16
14
12
T
A
= +25˚C
T
A
= -40˚C
T
A
= +85˚C
14
12
T
A
= -40˚ C
10
T
A
= +25˚ C
T
A
= +25˚ C
T
A
= -40˚ C
10
8
8
0.1
0.3
1.0
V
CC
= 3.0V
3.0
V
CC
= 3.0V
6
0.1
0.3
1.0
3.0
Frequency, f (GHz)
Frequency, f (GHz)
UPC2762T
INPUT AND OUTPUT
RETURN LOSS vs. FREQUENCY
0
V
CC
= 3.0V
RL
in
-10
-10
0
UPC2763T
INPUT AND OUTPUT
RETURN LOSS vs. FREQUENCY
V
CC
= 3.0V
RL
out
Return Loss (dB)
RL
out
-20
Return Loss (dB)
RL
in
-20
-30
-30
-40
0.1
0.3
1.0
3.0
-40
0.1
0.3
1.0
3.0
Frequency, f (GHz)
Frequency, f (GHz)
UPC2762T
ISOLATION vs. FREQUENCY
10
V
CC
= 3.0V
0
0
UPC2763T
ISOLATION vs. FREQUENCY
V
CC
= 3.0V
-10
Isolation, ISOL (dB)
-10
Isolation, ISOL (dB)
-20
-20
-30
-30
-40
-40
0.1
0.3
1.0
3.0
-50
0.1
0.3
1.0
3.0
Frequency, f (GHz)
Frequency, f (GHz)
UPC2762T, UPC2763T
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
UPC2762T
OUTPUT POWER vs. INPUT POWER
15
V
CC
= 3.3V
f = 900 MHZ
f = 900 MHZ
15
V
CC
= 3.3V
UPC2763T
OUTPUT POWER vs. INPUT POWER
Output Power, P
OUT
(dBm)
10
V
CC
= 3.0V
5
V
CC
= 2.7V
Output Power, P
OUT
(dBm)
10
V
CC
= 3.0V
5
V
CC
= 2.7V
0
0
-5
-5
-10
-25
-20
-15
-10
-5
0
-10
-25
-20
-15
-10
-5
0
Input Power, P
IN
(dBm)
Input Power, P
IN
(dBm)
UPC2762T
SATURATED OUTPUT POWER vs.
FREQUENCY AND VOLTAGE
13
15
UPC2763T
SATURATED OUTPUT POWER vs.
FREQUENCY AND VOLTAGE
Saturated Output Power, P
SAT
(dBm)
P
in
= -3 dBm
13
V
CC
= 3.3V
Saturated Output Power, P
SAT
(dBm)
P
in
= +3 dBm
V
CC
= 3.3V
11
V
CC
= 3.0V
9
11
V
CC
= 3.0V
9
V
CC
= 2.7V
7
7
V
CC
= 2.7V
5
5
3
0.1
0.3
1.0
3.0
3
0.1
0.3
1.0
3.0
Frequency, f (GHz)
Frequency, f (GHz)
UPC2762T
SATURATED OUTPUT POWER vs.
FREQUENCY AND TEMPERATURE
13
UPC2763T
SATURATED OUTPUT POWER vs.
FREQUENCY AND TEMPERATURE
15
Saturated Output Power, P
SAT
(dBm)
P
in
= +3 dBm
Saturated Output Power, P
SAT
(dBm)
P
in
= -3 dBm
13
T
A
= +85˚ C
11
T
A
= -40˚ C
T
A
= +25˚ C
9
11
T
A
= +25˚ C
T
A
= +85˚ C
9
T
A
= -40˚ C
7
7
5
5
3
0.1
0.3
1.0
3.0
3
0.1
0.3
1.0
3.0
Frequency, f (GHz)
Frequency, f (GHz)
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