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SR830-LF

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 30V V(RRM), Silicon, DO-201AD,
CategoryDiscrete semiconductor    diode   
File Size42KB,4 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
Download Datasheet Parametric View All

SR830-LF Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 30V V(RRM), Silicon, DO-201AD,

SR830-LF Parametric

Parameter NameAttribute value
MakerWon-Top Electronics Co., Ltd.
package instructionO-PALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage30 V
Maximum reverse current500 µA
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
®
SR820 – SR8100
8.0A SCHOTTKY BARRIER DIODE
WON-TOP ELECTRONICS
Pb
Features
Schottky Barrier Chip
Guard Ring for Transient and ESD Protection
Surge Overload Rating to 150A Peak
Low Power Loss, High Efficiency
Ideally Suited for Use in High Frequency
SMPS, Inverters and As Free Wheeling Diodes
A
B
A
Mechanical Data
Case: DO-201AD, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 1.2 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
Dim
A
B
C
D
DO-201AD
Min
25.4
7.20
1.20
4.80
Max
9.50
1.30
5.30
C
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SR
820
20
14
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on
Rated Load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 8.0A
@T
J
= 25°C
@T
J
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
J
R
θJA
R
θJL
T
J
T
STG
SR
830
30
21
SR
840
40
28
SR
845
45
32
8.0
150
SR
850
50
35
SR
860
60
42
SR
880
80
56
SR
8100
100
70
Unit
V
V
A
A
0.55
0.5
50
450
25
8.0
-65 to +125
-65 to +150
0.75
0.85
V
mA
Typical Junction Capacitance (Note 2)
Thermal Resistance, Junction to Ambient (Note 3)
Thermal Resistance, Junction to Lead (Note 3)
Operating Temperature Range
Storage Temperature Range
350
pF
°C/W
-65 to +150
°C
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
3. Vertical PCB mounting with 12.7mm lead length on 63.5 x 63.5mm copper pad.
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
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