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Z02W3.6VZ

Description
Zener Diode, 3.68V V(Z), 3.4%, 0.2W, Silicon, Unidirectional, SOT-23, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size360KB,4 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Environmental Compliance
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Z02W3.6VZ Overview

Zener Diode, 3.68V V(Z), 3.4%, 0.2W, Silicon, Unidirectional, SOT-23, 3 PIN

Z02W3.6VZ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerKEC
Parts packaging codeSOT-23
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.2 W
Certification statusNot Qualified
surface mountYES
technologyZENER
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
SEMICONDUCTOR
TECHNICAL DATA
CONSTANT VOLTAGE REGULATION APPLICATION.
REFERENCE VOLTAGE APPLICATION.
Z02W2.2V~36V
ZENER DIODE
SILICON EPITAXIAL PLANAR DIODE
L
E
B
L
FEATURES
・Small
Package : SOT-23
2
A
G
H
D
・Normal
Voltage Tolerance About
±2.5%.
3
1
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
P
D
T
j
T
stg
RATING
200
150
-55½150
UNIT
Q
P
P
mW
K
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
0.1 MAX
C
N
M
3
1. NC
2. ANODE
3. CATHODE
2
J
1
SOT-23
Marking
Example 1) 2.0V ~ 3.9V
Grade
Lot No.
Example 2) 4.3V ~ 9.1V
Grade
Lot No.
Type Name
Type Name
4.3
Example : Z02W4.3V
TYPE NAME : Z02W2.2V
Z02W2.4V
Z02W2.7V
Z02W3.0V
Z02W3.3V
Z02W3.6V
2B
2C
2D
30
33
36
Example 3) 10V ~ 24V
Grade
Lot No.
Example 4) 30V ~ 36V
Lot No.
Type Name
Type Name
10
Example : Z02W10V
TYPE NAME : Z02W30V
Z02W33V
Z02W36V
30A
33A
36A
2012. 7. 16
Revision No : 8
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