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RD75EB

Description
Zener Diode, 75V V(Z), 6.04%, 0.5W, Silicon, Unidirectional, DO-35, GLASS, DHD, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size98KB,12 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

RD75EB Overview

Zener Diode, 75V V(Z), 6.04%, 0.5W, Silicon, Unidirectional, DO-35, GLASS, DHD, 2 PIN

RD75EB Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
Objectid1481070827
Parts packaging codeDO-35
package instructionO-LALF-W2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
compound_id9212863
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage75 V
surface mountNO
technologyZENER
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance6.04%
Working test current2 mA
DATA SHEET
ZENER DIODES
RD2.0E to RD200E
500 mW DHD ZENER DIODE
(DO-35)
DESCRIPTION
NEC Type RD2.0E to RD200E Series are planar type zener diode in the
popular DO-35 package with DHD (Double Heatsink Diode) construction
having allowable power dissipation of 500 mW. To meet various application
at customers, V
z
(zener voltage) is classified into the tight tolerance under
the specific suffix (B, B1 to B7).
PACKAGE DIMENSIONS
(in millimeters)
φ
0.5
25 MIN.
Cathode
indication
• DHD (Double Heatsink Diode) Construction
• V
z
: Applied E24 standard (RD130E to RD200E: 10 volts step)
• DO-35 Glass sealed package
φ
2.0 MAX.
25 MIN.
ORDER INFORMATION
RD2.0 E to RD39E with suffix “B1”, “B2”, “B3”, “B4”, “B5”, “B6” or “B7”
should be applied for orders for suffix “B”.
APPLICATIONS
Circuits for Constant Voltage, Constant Current, Waveform Clipper, Surge absorber, etc.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Forward Current
Power Dissipation
Surge Reverse Power
Junction Temperature
Storage Temperature
I
F
P
P
RSM
T
j
T
stg
200 mA
500 mW
100 W (t = 10
µ
s)
175 ˚C
–65 to +175 ˚C
to see Fig. 17
Document No. D10213EJ5V0DS00 (5th edition)
Date Published December 1998 N CP(K)
Printed in Japan
©
4.2 MIN.
FEATURES
1981

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