Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel, MODULE-12
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Objectid | 2121115340 |
| Parts packaging code | MODULE |
| package instruction | MODULE-12 |
| Contacts | 12 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 220 A |
| Collector-emitter maximum voltage | 1200 V |
| Configuration | SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
| Gate-emitter maximum voltage | 20 V |
| JESD-30 code | R-XUFM-X12 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 12 |
| Maximum operating temperature | 150 °C |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 690 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | UNSPECIFIED |
| Terminal location | UPPER |
| transistor applications | POWER CONTROL |
| Transistor component materials | SILICON |
| Nominal off time (toff) | 640 ns |
| Nominal on time (ton) | 335 ns |
| VCEsat-Max | 2.1 V |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD